2N7002

MMBT5551 2N7002 AO3400 SI2305 2N7002 N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transis-tors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching appli-cations. SOT-23 D 2. SOURCE 3. DRAIN MARKING: 7002 G S Features • • • • 1. GATE High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain-to-Source Voltage 60 V VDGR VGSS Drain-Gate Voltage (RGS ≤ 1 MΩ ) Gate-Source Voltage - Continuous 60 ±20 ±40 V V 115 800 200 mA mW 1.6 -55 to 150 300 mW/°C °C °C ID PD TJ, TSTG TL Gate-Source Voltage - Non Repetitive (tp < 50 S) Maximum Drain Current - Continuous Maximum Drain Current - Pulsed Maximum Power Dissipation Derated above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16inch from Case for 10 Seconds Thermal Characteristics Values are at TC = 25°C unless otherwise noted. Parameter RJA www.tw-gmc.com Thermal Resistance, Junction to Ambient 1 Value Unit 625 °C/W MMBT5551 2N7002 AO3400 SI2305 Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter Off Characteristics Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 A IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V Min. Typ. Max. 60 Unit V 1 A VDS = 60 V, VGS = 0 V, TC = 125°C 0.5 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA Electrical Characteristics (Continued) Symbol Parameter On Characteristics Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(ON) Static Drain-Source OnResistance VDS(ON) Drain-Source On-Voltage ID(ON) On-State Drain Current gFS Forward Transconductance Min. Typ. Max. Unit 2.1 2.5 V VGS = 10 V, ID = 500 mA 1.2 7.5  VGS = 10 V, ID = 500 mA, TC = 100°C 1.7 13.5 VGS = 10 V, ID = 500 mA 0.6 3.75 VGS = 5.0 V, ID = 50 mA 0.09 1.5 VGS = 10 V, VDS  2 VDS(on) VDS 2VDS(ON), ID = 200 mA 1 V 500 2700 mA 80 320 mS Dynamic Characteristics Ciss Coss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff VDS = 25 V, VGS = 0 V, f = 1.0 MHz 20 11 50 25 4 5 pF VDD = 30 V, RL = 150Ω ID = 200 mA, VGS= 10 V, RGEN = 25Ω 20 ns Turn-Off Time VDD = 30 V, RL = 150 ID = 200 mA, VGS= 10 V, RGEN = 25Ω Drain-Source Diode Characteristics and Maximum Ratings 20 ns IS Maximum Continuous Drain-Source Diode Forward Current 115 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 0.8 A VSD Drain-Source Diode Forward Voltage 1.2 V VGS = 0 V, IS = 400 mA(1) Note: 1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %. www.tw-gmc.com 1 2 0.88 MMBT5551 2N7002 AO3400 SI2305 Typical Characteristics 3 9.0 8.0 1 .5 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 7.0 6.0 1 5.0 0 .5 4.0 V GS =4.0V 4 .5 5 .0 2 .5 6 .0 2 7 .0 8 .0 1 .5 9 .0 10 1 I D , DRAIN-SOURCE CURRENT (A) 2 3.0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V 4 0 .5 5 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 2 3 V GS = 10V RDS(on) , NORMALIZED I D = 500m A 1.5 1.25 1 0.75 V GS 2 .5 TJ = 1 2 5 ° C 2 1 .5 25°C 1 -55°C 0 .5 0.5 -5 0 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 0 150 Figure 3. On-Resistance Variation with Temperature 0 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 4. On-Resistance Variation with Drain Current and Temperature 2 T J = -55°C 25°C 1.6 Vth , N250$/,=(D WK91250$/,=(' *$7(6285&(7+5(6+2/'92/7$*( 1 .1 VDS = 10 V , D , DRAIN CURRENT (A) 0 .4 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 1.75 125°C 1.2 0.8 0.4 0 0 Figure 1. On-Region Characteristics DRAIN-SOURCE ON-RESISTANCE RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V Figure 5. Transfer Characteristics www.tw-gmc.com I D = 1 mA 1 0 .9 5 0 .9 0 .8 5 0 .8 -50 10 V DS = VGS 1 .0 5 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) Figure 6. Gate Threshold Variation with Temperature 1 3 125 150 MMBT5551 2N7002 AO3400 SI2305 Typical Characteristics 2 I D = 250µA 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 0 .5 25°C 0 .0 5 -5 5 ° C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 0 .4 V SD 0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) 1 .4 10 60 V DS = 2 5 V VGS , GA E-SOURCE VOLTAGE (V) 40 C iss CAPACITANCE (pF) TJ = 1 2 5 ° C 0 .1 Figure 8. Body Diode Forward Voltage Variation with Figure 7. Breakdown Voltage Variation with Temperature 20 C oss 10 5 C rss f = 1 MHz 2 1 V GS = 0V 1 IS , REVERSE DRAIN CURRENT (A) BVDSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1.075 V GS = 0V 1 2 VDS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 8 6 I D =5 0 0 m A 4 2 0 50 Figure 9. Capacitance Characteristics 280m A 0 0 .4 0 .8 t on t d(on) R GEN V OUT Output, Vout tf 90% 10% 10% 90% DUT G 2 t off t d(off) 90% Input, Vin 50% 50% 10% S Pulse Width Figure 11.6ZLWFKLQJ7HVW&LUFXLW www.tw-gmc.com tr RL D VGS 1 .6 1 .2 Figure 10. Gate Charge Characteristics VDD V IN 0 .8 1 .2 Q g , GATE CHARGE (nC) 115m A Figure 12. Switching Waveforms 1 4 Inverted MMBT5551 2N7002 AO3400 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 5