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BSS123

BSS123

  • 厂商:

    BORN(伯恩)

  • 封装:

    SOT-23

  • 描述:

    SOT23 300mW

  • 数据手册
  • 价格&库存
BSS123 数据手册
BSS123 MOSFET N-Channel Enhancement-Mode MOSFET SOT-23 - ROHS Features • Low RDS(on) @VGS=10V • 5V Logic Level Control • N Channel SOT23 Package • HMB ESD Protection • Pb−Free, RoHS Compliant Applications V(BR)DSS RDS(ON) Typ ID Max •ON/OFF Switch 3.5Ω @ 10V 100V • Relay Driver 0.2A 4Ω @ 4.5V • High-speed line Driver • Power Management in Portable and Battery etc. Order Information Product Package BSS123 SOT23 Marking SAW89 Packing Min Unit Quantity 3000PCS/Reel 3000PCS Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±20 V V(BR)DSS Drain-Source Breakdown Voltage 100 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 150 °C TA =25°C 0.8 A TA =25°C 0.2 TA =70°C 0.15 TA =25°C 0.3 Mounted on Large Heat Sink IDM ID PD Pulse Drain Current Tested① Continuous Drain Current A Maximum Power Dissipation W TA =70°C R JA Rev 8: Nov 2018 Thermal Resistance Junction-Ambient www.born-tw.com 0.2 400 °C/W Page 1 of 4 BSS123 MOSFET Symbol N-Channel Enhancement-Mode MOSFET Parameter Condition ROHS Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 100 -- -- V Zero Gate Voltage Drain Current(TA=25℃) VDS=100V, VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(TA=125℃) VDS=80V, VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V -- -- ±10 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 2.0 3.0 V RDS(ON) Drain-Source On-State Resistance② VGS=10V, ID=0.2A -- 3.5 6 Ω RDS(ON) Drain-Source On-State Resistance② VGS=4.5V, ID=0.1A -- 4 8 Ω -- 31.6 -- pF -- 2.8 -- pF -- 2 -- pF -- 0.74 -- nC -- 0.08 -- nC -- 0.26 -- nC -- 2 -- ns -- 3.1 -- ns - 6.5 -- ns -- 15 -- ns -- -- 0.1 A -- 0.85 1.2 V V(BR)DSS IDSS Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=50V, VGS=0V, f=1MHz VDS=50V ID=0.2A, VGS=10V Switching Characteristics @ TJ = 25°C (unless otherwise stated) t d(on) Turn on Delay Time tr Turn on Rise Time t d(off) Turn Off Delay Time tf Turn Off Fall Time VDD=50V, ID=0.2A, RG=3.3Ω, VGS=10V Source Drain Diode Characteristics @ TJ = 25°C (unless otherwise stated) ISD Source drain current(Body Diode) VSD Forward on voltage② TA=25℃ Tj=25℃, ISD=0.2A, VGS=0V Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. Rev 8: Nov 2018 www.born-tw.com Page 2 of 4 BSS123 MOSFET N-Channel Enhancement-Mode MOSFET ROHS ID, Drain-Source Current (mA) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature ID, Drain-Source Current (A) VDS, Drain -Source Voltage (mV) Tc, Case Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) VGS, Gate -Source Voltage (V) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Rev 8: Nov 2018 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.born-tw.com Page 3 of 4 BSS123 MOSFET N-Channel Enhancement-Mode MOSFET ROHS VGS, Gate-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage ZqJA Normalized Transient C, Capacitance (pF) Typical Characteristics Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT):mm Rev 8: Nov 2018 www.born-tw.com Page 4 of 4
BSS123 价格&库存

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BSS123
    •  国内价格
    • 20+0.14753
    • 200+0.11740
    • 600+0.10066
    • 3000+0.08446
    • 9000+0.07571
    • 21000+0.07107

    库存:3922

    BSS123
    •  国内价格
    • 1+0.52030
    • 200+0.17380
    • 1500+0.10846
    • 3000+0.07480

    库存:2680

    BSS123
      •  国内价格
      • 1+0.12580

      库存:14

      BSS123
        •  国内价格
        • 20+0.09434
        • 200+0.08814
        • 500+0.08193
        • 1000+0.07572
        • 3000+0.07262
        • 6000+0.06827

        库存:994