BAT54xx Series
SWITCHING
SCHOTTKY
Schottky Barrier Diode
ROHS
SOT-23
-
Features
Extremely Fast Switching Speed
MARKING:
BAT54
BAT54C
BAT54A
BAT54S
Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings & Thermal Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified.)
Parameter
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
Value
Unit
30
V
DC Blocking Voltage
VR
Forward Continuous Current
IFM
200
mA
Non-repetitive Peak Forward Surge Current @ t=8.3ms
IFSM
600
mA
Repetitive Peak Forward Current @ t≤1s,δ≤0.5
IFRM
300
mA
Power Dissipation
PD
200
mW
RΘJA
500
℃/W
Junction Temperature
Tj
125
℃
Storage Temperature
Tstg
-55~+150
℃
Thermal Resistance from Junction to Ambient
Electrical Characteristics
( Ratings at 25℃ ambient temperature unless otherwise specified).
Parameter
Reverse voltage
Forward voltage
Symbol
V(BR)
Min
Typ
Max
VF
Unit
Test conditions
V
IR=100μA
0.24
V
IF1=0.1mA
0.32
V
IF2=1mA
0.40
V
IF3=10mA
0.50
V
IF4=30mA
1
V
IF5=100mA
30
Reverse current
IR
2
μA
VR=25V
Diode capacitance
CD
10
pF
VR=1V,f=1MHz
Reverse recovery time
trr
5
ns
Rev 8: Nov 2014
www.born-tw.com
IF=IR=10mA
Irr=0.1×IR,RL=100Ω
Page 1 of 3
BAT54xx Series
SWITCHING
SCHOTTKY
Schottky Barrier Diode
Forward
(uA)
o
C
o
C
REVERSE CURRENT IR
=1
00
a
T
1
0.1
0
200
400
600
FORWARD VOLTAGE
VF
12
8
4
15
REVERSE VOLTAGE
Rev 8: Nov 2014
20
VR
0.1
0
5
10
15
(mW)
250
PD
200
25
30
(V)
www.born-tw.com
20
VR
25
30
125
150
(V)
Power Derating Curve
300
16
10
o
Ta=25 C
REVERSE VOLTAGE
f=1MHz
5
1
(mV)
Ta=25℃
0
Ta=100 C
10
0.01
1000
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
800
Capacitance Characteristics
20
0
Characteristics
o
10
0.01
Reverse
100
T=
a 2
5
FORWARD CURRENT
Characteristics
100
IF
(mA)
1000
ROHS
150
100
50
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
(℃)
Page 2 of 3
BAT54xx Series
SWITCHING
SCHOTTKY
Schottky Barrier Diode
ROHS
SOT -23 PACKAGE OUTLINE Plastic surface mounted package
SOT-23
(UNIT):mm
Rev 8: Nov 2014
www.born-tw.com
Page 3 of 3
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