AO3401A

AO3401A MOSFET P-Channel Enhancement-Mode MOSFET ROHS SOT-23 - Features  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit BVDSS VGS -30 +12 V V Drain Current (continuous) ID -4.2 A Drain Current (pulsed) IDM -18 A Total Device Dissipation TA=25℃ PD 1400 mW Drain-Source Voltage Gate- Source Voltage Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ Electrical Characteristics Characteristic Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) Gate Threshold Voltage (ID = -250uA,VGS= VDS) Diode Forward Voltage Drop (IS= -1 A,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= -24V) (VGS=0V, VDS= -24V , TA=55℃) Symbol Min Typ Max Unit BVDSS -30 — — V VGS(th) -0.6 — -2 V VSD — — -1 V IDSS — — -1 uA -5 Gate Body Leakage (VGS=+12V, VDS=0V) IGSS — — +100 Static Drain-Source On-State Resistance (ID= -4.1A,VGS= -10V ) Static Drain-Source On-State Resistance (ID= -2A,VGS= -4.5V) Static Drain-Source On-State Resistance (ID= -1A,VGS= -2.5V) Input Capacitance (VGS=0V, VDS= -15V,f=1MHz) Output Capacitance (VGS=0V, VDS= -15V,f=1MHz) RDS(ON) — 42 50 mΩ RDS(ON) — 53 60 mΩ RDS(ON) — 80 85 mΩ Turn-ON Time (VDS= -15V, VGS= -10 V, RGEN=6Ω) Turn-OFF Time (VDS= -15V, VGS= -10 V, RGEN=6Ω) Rev 8: Nov 2014 nA CISS — 954 — pF COSS — 115 — pF t(on) — 6 — ns t(off) — 38 — ns www.born-tw.com Page 1 of 3 AO3401A MOSFET P-Channel Enhancement-Mode MOSFET Fig 1: Output Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 5: Gate-Charge Characteristics Rev 8: Nov 2014 www.born-tw.com ROHS Figure 2: Transfer Characteristics Figure 4: On-Resistance vs. Gate-Source Voltage Figure 6: Safe Operating Area Page 2 of 3 AO3401A MOSFET P-Channel Enhancement-Mode MOSFET ROHS SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2014 www.born-tw.com Page 3 of 3