MMBT4401

MMBT4401 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors RHOS SOT-23 Features  Power Dissipation of 300mW  High Stability and High Reliability 1. BASE 2. EMITTER 3. COLLECTOR Marking: 2X Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter -Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-+150 ℃ Thermal resistance From junction to ambient RθJA 417 ℃/W Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbols Test Condition Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=50V, IE=0 VCE=35V, VEB(off)=0.4V VEB=5V, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=1V, IC=500mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=20mA,f=100MHz VCC=30V, VBE(off)=-2V, IC=150mA, IB1=15mA DC current gain Collector-emitter saturation voltage VCE(sat) Base -emitter saturation voltage VBE(sat) Transition frequency Delay time Rise time Storage time Fall time fT td tr ts tf Rev 8: Nov 2014 VCC=30V, IC=150mA, IB1=IB2=15mA www.born-tw.com Limits Min 60 40 6 Max 100 100 100 20 40 80 100 40 Unit V V V nA nA nA 300 0.40 0.75 0.95 1.20 250 15 20 225 60 V V V V MHz nS nS nS nS Page 1 of 2 MMBT4401 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS - Rev 8: Nov 2014 www.born-tw.com Page 2 of 2