S9014

S9014 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors SOT-23 RHOS Features  As complementary type the PNP transistor S9015 is recommended  Epitaxial planar die construction Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Symbol Parameter Value Units 1. BASE VCBO Collector-Base Voltage 50 V 2. EMITTER VCEO Collector-Emitter Voltage 45 V 3. COLLECTOR VEBO Emitter-Base Voltage 5 V Collector Current -Continuous 100 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ C MARKING: 1AM Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency CLASSIFICATION OF hFE(1) Rev 8: Nov 2014 Test Condition Symbols V(BR)CBO V(BR)CEO V(BR)EBO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) fT IC=100uA, IE=0 IC=0.1mA, IB=0 IE=100uA, IC=0 VCE=35V, IB=0 VCB=50V, IE=0 VEB=3V, IC=0 VCE=5V, IC=1mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=10mA,f=30MHz Limits Min 50 45 5 200 Max 100 100 100 1000 0.30 1.00 150 RANK L H RANGE 200-450 450-1000 www.born-tw.com Unit V V V nA nA nA V V MHz Page 1 of 2 S9014 Transistors Rev 8: Nov 2014 SOT-23 Plastic-Encapsulate Transistors(NPN) www.born-tw.com RHOS Page 2 of 2