S9013

S9013 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors SOT-23 RHOS Features  Complementary to S9012  High Stability and High Reliability MARKING：J3 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter -Base Voltage VEBO 5 V Collector Current-Continuous IC 500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-+150 ℃ Thermal resistance From junction to ambient RθJA 416 ℃/W Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbols Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Base -emitter voltage Transition frequency Collector output capacitance CLASSIFICATION OF hFE(1) Test Condition IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCE=20V, IB=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=500mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCB=1V, IC=10mA VCE=6V, IC=20mA,f=30MHz VCB=6V, IE=0, f=1MHz Limits Min 40 25 5 120 40 Max 100 100 100 400 0.60 1.20 0.70 150 8 RANK L H J RANGE 120-200 200-350 300-400 Rev 8: Nov 2014 www.born-tw.com Unit V V V nA nA nA V V V MHz pF Page 1 of 2 S9013 Transistors Rev 8: Nov 2014 SOT-23 Plastic-Encapsulate Transistors(NPN) www.born-tw.com RHOS Page 2 of 2