TPD4E05U06DQAR-N

TPD4E05U06DQAR-N ESD Protection Diode Array »Features ■ 60Watts peak pulse power (tp = 8/20μs) ■ Unidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.3pF typ. I/O to I/O) ■ IEC 61000-4-2 ±15kV contact ±20kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 3.5A (8/20μs) »Applications »Mechanical Data ■ USB3.0, USB2.0,Ethernet ■ Tiny DFN10L(2.5mmx1.0mm) package ■ HDMI 2.0, Displayport 1.3,eSATA ■ Molding compound flammability rating: UL 94V-0 ■ Unified Display interface ■ Packaging: Tape and Reel ■ Digital Visual Interface ■ RoHS/WEEE Compliant ■ High speed serial interface »Schematic & PIN Configuration Revision 2018 www.born-tw.com 1/4 TPD4E05U06DQAR-N »Absolute Maximum Rating Rating Symbol Value Units PPP 60 Watts IPP 3.5 A VESD 20 15 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ Peak Pulse Power ( tp =8/20µs ) Peak Pulse Current ( tp =8/20µs ) (note1) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM Units 5.0 V VBR IT=1mA Reverse Leakage Current IR VRWM=5V,T=25℃ 0.5 µA Peak Pulse Current IPP tp =8/20µs 3.5 A Clamping Voltage VC IPP=3.5A,tp=8/20µs 10 13 V VR = 0V, f = 1MHz I/O to I/O 0.25 0.35 VR = 0V, f = 1MHz I/O to GND 0.3 0.5 Junction Capacitance Cj 5.5 Max 7.8 V pF »Electrical Parameters (TA = 25°C unless otherwise noted) Parameter IPP MaximumReversePeak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IF WorkingPeak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM Breakdown Voltage @ IT IR VF IT V Test Current IPP Note:.8/20µs pulse waveform. Revision 2018 www.born-tw.com 2/4 TPD4E05U06DQAR-N »Typical Characteristic Curves Fig.2 Pulse Derating Curve Fig.1 Peak Pulse Power RatingCurve 110 100 % of Rated Power (PPP) or IPP Peak Pulse Power –PPP (KW) 10 1 60w 8/20μs waveform 0.1 0.01 0.1 1 10 100 Pulse Duration tp (μs) 1000 Fig.3 PulseWaveform-8/20μs 120 40 20 0 20 0 0 5 10 15 150 30ns 60ns 10% 0 25 50 75 100 125 Ambient Temperature—TA(℃) Percent of IPP Percent of IPP 50%IPP, 20μS e-t 40 100% 90% 100 60 60 Fig.4 PulseWaveform-ESD(IEC61000-4-2) 100%IPP , 8μS 80 80 20 25 30 tr 0.7 to 1ns 0 30 Time (μs) 60 Time (ns) Fig.5 Eye Diagram - HDMI mask at 3.4Gbpsper channel Fig.6 Insertion Loss S21 - I/O toGND 2 2.5GHz @ -1dB Horizontal: 50 ps/div Vertical: 200 mV/div Insertion Loss (dB) 0 -2 -4 4GHz @ -3dB -6 -8 -10 100k 1M 10M 100M 1G 10G Frequency (Hz) Revision 2018 www.born-tw.com 3/4 TPD4E05U06DQAR-N »Outline Drawing – DFN10L(2.5mmx1.0mm) Dimensions in millimeters Symbol Min Nom Max A 0.45 0.50 0.55 A1 - 0.02 0.05 A3 0.10 0.15 0.20 D 2.45 2.50 2.55 E 0.95 1.00 1.05 D1 0.35 0.40 0.45 b 0.15 0.20 0.25 e 0.50BSC L 0.35 0.40 0.45 »Marking 5R3P »Ordering information Order code TPD4E05U06DQAR-N Revision 2018 Package DFN10L(2.5mmx1.0mm) Base qty Delivery mode 3k Tape and reel www.born-tw.com 4/4