MMBT5401

MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) Transistors RHOS SOT-23 Features  Complementary to MMBT5551  Epitaxial planar die construction  Power Dissipation of 300mW 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter -Base Voltage VEBO -5 V Collector Current-Continuous IC -600 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-+150 ℃ Thermal resistance From junction to ambient RθJA 416 ℃/W Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbols Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO * V(BR)EBO ICBO IEBO hFE(1) * hFE(2) * hFE(3) * VCE(sat)1 * VCE(sat)2 * VBE(sat)1 * VBE(sat)2 * fT DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Test Condition IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-120V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=10mA,f=30MHz Limits Min -160 -150 -5 Max -100 -100 80 100 30 Unit V V V nA nA 300 -0.2 -0.5 -1.00 -1.00 100 V V V V MHz *Pulse test: pulse width≤300us, duty cycle≤2.0% CLASSIFICATION OF hFE(2) HFE Rev 8: Nov 2014 100-300 RANK L H RANGE 100-200 200-300 www.born-tw.com Page 1 of 2 MMBT5401 Transistors Rev 8: Nov 2014 SOT-23 Plastic-Encapsulate Transistors(PNP) www.born-tw.com RHOS Page 2 of 2