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ES1J

ES1J

  • 厂商:

    TWGMC(台湾迪嘉)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    整流二极管 VRRM=600V VF=1.7V SMA

  • 数据手册
  • 价格&库存
ES1J 数据手册
ES1A THRU ES1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features PINNING PIN  The plastic package carries Underwriters Laboratory DESCRIPTION 1 Cathode 2 Anode Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: DO-214AC/SMA  250°C/10 seconds at terminals 2 1 Glass passivated chip junction Mechanical Data  Case : JEDEC DO-214AC/SMA Molded plastic body  Terminals : Solder plated, solderable per MIL-STD-750,Method 2026  Polarity : Polarity symbol marking on body  Mounting Position : Any  Weight : 0.002 ounce, 0.055 grams Unipolar Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55℃ VRRM VRMS VDC I(AV) Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM Maximum instantaneous forward voltage at 1.0A VF Maximum DC reverse current at rated DCblocking voltage IR TA=25℃ TA=125℃ ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 V V V 1.0 A 30 A 0.95 1.25 5 50 1.7 V uA trr 35 ns CJ 15.0 pF Typical thermal resistance (NOTE 3) RJA 60.0 ℃/W Operating junction and storage temperature range TJ,TSTG -55 to +150 ℃ Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas www.tw-gmc.com 1 ES1A THRU ES1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half wave resistive or inductive 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.5 Typical Junction Capacitance 1.0 ES1A~ES1D ES1E/ES1G 0.1 ES1J 0.01 0.001 0.5 1.5 1.0 2.0 Peak Forward Surage Current (A) 35 30 25 20 15 10 8.3 ms Single Half Sine Wave (JEDEC Method) 1 10 100 Number of Cycles www.tw-gmc.com 20 15 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 05 1 10 Reverse Voltage (V) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 00 25 0.1 2.5 Instaneous Forward Voltage (V) 05 100 30 T J =25°C 0 80 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 10 40 20 2 100 ES1A THRU ES1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D The recommended mounting pad size 2.4 (94) 1.8 (71) 1.8 (71) 1.8 (71) mm Unit : (mil) www.tw-gmc.com 3 a 0.3 12

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ES1J
  •  国内价格
  • 1+0.05249
  • 100+0.04899
  • 300+0.04549
  • 500+0.04200
  • 2000+0.04025
  • 5000+0.03920

库存:95