ESD5431N-2/TR

ESD5431N ESD5431N 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5431N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to power lines, low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. DFN1006-2L (Bottom View) The ESD5431N may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 10A (8/20μs) according to Pin1 IEC61000-4-5. Pin2 The ESD5431N is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Stand-off voltage: ±3.3V Max.  Transient protection for each line according to Pin1 IEC61000-4-2 (ESD): ±30kV (contact discharge) *1 Pin2 IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 10A (8/20μs) 1 = Device code  Capacitance: CJ = 17.5pF typ.  Low leakage current: IR = 1nA typ.  Low clamping voltage: VCL = 8V typ. @ IPP = 16A (TLP)  Solid-state silicon technology * = Month code (A~Z) Marking (Top View) Order information Applications  Cellular handsets  Computers and peripherals  Microprocessors  Power lines  Portable Electronics  Notebooks Will Semiconductor Ltd. Device Package Shipping ESD5431N-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.5, 2017/03/14 ESD5431N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 100 W Peak pulse current (tp = 8/20μs) IPP 10 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±30 kV ±30 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5, 2017/03/14 ESD5431N o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Reverse breakdown voltage Reverse holding voltage VBR VHOLD Condition Min. VRWM = 3.3V Typ. 1 Max. Unit ±3.3 V 100 nA IBR = 1mA 3.4 V IHOLD = 50mA 3.4 V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 8 V Clamping voltage 2) VCL VESD = 8kV 8 V Clamping voltage 3) Dynamic resistance VCL 1) Junction capacitance IPP = 1A, tp = 8/20μs 6 V IPP = 5A, tp = 8/20μs 8 V IPP = 10A, tp = 8/20μs 10 V RDYN Ω 0.20 VR = 0V, f = 1MHz 17.5 22 pF VR = 3.3V, f = 1MHz 12.5 16 pF CJ Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 1.5, 2017/03/14 ESD5431N o Typical characteristics (TA=25 C, unless otherwise noted) Time to half-value: T2= 20s Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 T = 8s 100 90 50 T2 10 0 0 10 20 T T1 tr = 0.7~1ns Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 10 20 CJ - Junction capacitance (pF) Pulse waveform: tp = 8/20s VC - Clamping voltage (V) 9 8 Pin2 to Pin1 7 Pin1 to Pin2 6 5 4 0 2 4 6 8 10 f = 1MHz VAC = 50mV 18 16 14 12 10 -4 12 -3 -2 Clamping voltage vs. Peak pulse current 0 1 2 3 4 Capacitance vs. Reverse voltage 100 % of Rated power 1000 Peak pulse power (W) -1 VR - Reverse voltage (V) IPP - Peak pulse current (A) 100 10 1 t 60ns 30ns Time (s) 80 60 40 20 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 1.5, 2017/03/14 ESD5431N o Typical characteristics (TA=25 C, unless otherwise noted) ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 16 TLP current (A) 12 8 Z0 = 50 tr = 2ns tp = 100ns 4 0 -4 -8 -12 -16 -20 -10 -8 -6 -4 -2 0 2 4 6 8 10 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.5, 2017/03/14 PACKAGE OUTLINE DIMENSIONS DFN1006-2L b CATHODE MARKING (Ⅰ) L E (Ⅱ) D e Top View Bottom View (Ⅲ) (Ⅰ) A (Ⅱ) A3 A1 Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.340 0.450 0.530 A1 0.000 0.020 0.050 A3 0.125 Ref. D 0.950 1.000 1.075 E 0.550 0.600 0.675 b 0.200 0.250 0.300 L 0.450 0.500 0.550 e 0.650 BSC Recommended PCB Layout (Unit: mm) 0.55 0.60 0.30 Notes: This recommended land pattern is for reference 0.85 1.40 Will Semiconductor Ltd. purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 6 Revision 1.5, 2017/03/14 TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 7 Q4 Revision 1.5, 2017/03/14