WNM2024-3/TR

WNM2024 WNM2024 Http://www.sh-willsemi.com Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) (Ω) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 1 2 circuit. Standard Product WNM2024 is Pb-free and G S Halogen-free. Pin configuration (Top view) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 3 W24* 2 1 W24 = Device Code * = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Will Semiconductor Ltd. Order information 1 Device Package Shipping WNM2024-3/TR SOT-23 3000/Reel&Tape 2015/08/25 – Rev. 1.2 WNM2024 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID PD ID PD Unit V 3.9 3.6 3.1 2.9 0.8 0.7 0.5 0.4 3.6 3.3 2.8 2.6 0.7 0.6 0.4 0.3 A W A W Pulsed Drain Current c IDM 15 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA Typical Maximum 120 145 132 168 145 174 158 202 60 75 RθJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2015/08/25 – Rev. 1.2 WNM2024 Electronics Characteristics (Ta=25 C, unless otherwise noted) o Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±8V VGS(TH) VGS = VDS, ID = 250uA 20 V 1 uA ±100 nA 0.62 1.0 V VGS = 4.5V, ID = 3.6A 27 36 VGS =-2.5V, ID =2.8A 31 41 VGS = 1.8V, ID = 2.0A 36 47 VDS = 5 V, ID =3.6A 10 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.4 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 1025 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS =4.5 V, VDS =10 V, 0.66 Gate-to-Source Charge QGS ID = 3.6A 1.0 Gate-to-Drain Charge QGD 3.3 Turn-On Delay Time td(ON) 6.5 Rise Time tr VGS = 4.5 V, VDS = 6 V, Turn-Off Delay Time td(OFF) I D=2.0A , RG=6 Ω Fall Time tf VGS = 0 V, f = 1.0 MHz, VDS = pF 125 10 V 120 12.0 nC SWITCHING CHARACTERISTICS 11.5 ns 48 20 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 1.5A 3 0.5 0.6 1.5 V 2015/08/25 – Rev. 1.2 WNM2024 Typical Characteristics (Ta=25 C, unless otherwise noted) o 20 20 IDS-Drain to Source Current(A) IDS-Drain-to-Source Current (A) VGS=2.5V ~5V 16 VGS=2.0V 12 8 VGS=1.5V 4 0 0.0 0.4 0.8 1.2 1.6 o T=-50 C 16 o T=125 C 12 o T=25 C 8 4 0 0.0 2.0 0.5 VDS-Drain-to-Source Voltage(V) 2.0 2.5 3.0 Transfer characteristics 60 RDS(on)- On-Resistance (mΩ) 60 RDS(on)- On-Resistance(mΩ) 1.5 VGS-Gate-to-Source Voltage(V) Output characteristics 50 40 VGS=2.5V 30 20 VGS=4.5V 10 0 1.0 50 ID=3.6A 40 30 20 2 4 6 8 10 12 14 1.5 16 2.0 2.5 3.0 3.5 4.0 4.5 VGS-Gate-to-Source Voltage(V) IDS-Drain-to-Source Current(A) On-Resistance vs. Drain current On-Resistance vs. Gate-to-Source voltage 50 ID=3.6A, VGS=4.5V 40 30 20 10 -50 -25 0 25 75 50 o Temperature( C) VGS(TH) Gate Threshold Voltage (V) RDS(on)- On-Resistance (mΩ) 60 100 125 150 On-Resistance vs. Junction temperature Will Semiconductor Ltd. 0.8 ID=250uA 0.7 0.6 0.5 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 o Temperature ( C) Threshold voltage vs. Temperature 4 2015/08/25 – Rev. 1.2 WNM2024 2000 1.5 ISD-Source to Drain Current(A) F=1MHz 1600 1200 800 Ciss Coss Crss 400 0 2 4 6 8 VDS Drain-to-Source Voltage (V) 1.2 0.9 o T=150 C 0.6 o T=25 C 0.3 0.3 0.2 10 0.5 0.6 Body diode forward voltage 12 100 Limited by R DS(on) I D - Drain Current (A) 10 Power (W) 0.4 VSD-Source-to-Drain Voltage(V) Capacitance 8 TA = 25_C 6 4 10 100 μs 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC 2 TA = 25 °C Single Pulse 0 0.01 0.1 1 10 100 0.01 0.1 600 Time (sec) BVDSS Limited 1 10 V DS - Drain-to-Source Voltage (V) 100 Safe operating area Single pulse power 2 Normalized Effective Transient Thermal Impedance C - Capacitance(pF) VGS=0V 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 168_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.2 WNM2024 Package outline dimensions SOT-23 Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 A2 0.900 0.975 1.050 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 E1 2.250 2.400 2.550 e e1 0.950TYP 1.800 1.900 L 2.000 0.550REF L1 0.300 0.500 θ 0° 8° Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.2