WNM2021-3/TR

WNM2021 WNM2021 Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) (ȍ) 0.220@ VGS=4.5V 20 D 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-323 Descriptions D 3 The WNM2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 1 G in DC-DC conversion, power switch and charging circuit. Standard Product WNM2021 is Pb-free and Halogen-free. 2 S Pin configuration (Top view) Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-323 3 21* 1 21 = Device Code * DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Will Semiconductor Ltd. = Month (A~Z) Marking Applications z 2 Order information 1 Device Package Shipping WNM2021-3/TR SOT-323 3000/Reel&Tape 2015/08/25 – Rev. 1.3 WNM2021 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID PD ID PD Unit V 0.89 0.82 0.71 0.65 0.37 0.31 0.23 0.20 0.78 0.70 0.62 0.56 0.29 0.23 0.18 0.14 A W A W Pulsed Drain Current c IDM 1.4 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 275 335 325 395 375 430 445 535 260 300 a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2015/08/25 – Rev. 1.3 WNM2021 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V 1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±5V 5 uA VGS(TH) VGS = VDS, ID = 250uA 0.58 0.85 V VGS = 4.5V, ID = 0.55A 220 310 VGS = 2.5V, ID = 0.45A 260 360 VGS = 1.8V, ID = 0.35A 320 460 VDS = 5 V, ID = 0.55A 2.0 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.45 mŸ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 50 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.06 Gate-to-Source Charge QGS ID = 0.55A 0.15 Gate-to-Drain Charge QGD VGS = 0 V, f = 100 kHz, VDS = pF 13 10 V 8 1.15 nC 0.23 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 22 Rise Time tr VDD=10V, VGS=4.5V, 80 Turn-Off Delay Time td(OFF) ID=0.55A, RG=6Ω 700 Fall Time tf ns 380 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 0.35A 3 0.5 0.7 1.5 V 2015/08/25 – Rev. 1.3 WNM2021 Typical Characteristics (Ta=25oC, unless otherwise noted) 2.0 VGS= 2.5V ~5.0V 3 IDS-Drain to Source Current(A) IDS-Drain-to-Source Current (A) 4 VGS=2.0V 2 VGS=1.5V 1 0 0.0 0.4 0.8 1.2 1.6 VDS=5V 1.6 1.2 o T=-50 C o T=25 C 0.8 o T=125 C 0.4 0.0 0.0 2.0 0.4 1.6 2.0 1600 350 RDS(on)- On-Resistance (m:) 400 RDS(on)- On-Resistance(m:) 1.2 Transfer characteristics Output characteristics VGS=1.8V 300 250 VGS=2.5V 200 VGS=4.5V 150 100 0.4 0.8 1.2 1.6 1200 800 400 2.0 1.0 1.5 IDS-Drain-to-Source Current(A) 2.0 2.5 3.0 3.5 4.0 4.5 VGS-Gate-to-Source Voltage(V) On-Resistance vs. Gate-to-Source voltage On-Resistance vs. Drain current 320 0.8 VGS(TH) Gate Threshold Voltage (V) VGS=4.5V, ID=0.55A RDS(on)- On-Resistance (m:) 0.8 VGS-Gate-to-Source Voltage(V) VDS-Drain-to-Source Voltage(V) 280 240 200 160 120 -50 -25 0 0.7 0.6 0.5 0.4 0.3 0.2 -50 25 50 75 100 125 150 o Temperature( C) -25 0 25 50 75 100 125 150 o Temperature ( C) Threshold voltage vs. Temperature On-Resistance vs. Junction temperature Will Semiconductor Ltd. ID=250uA 4 2015/08/25 – Rev. 1.3 WNM2021 60 0.8 F=100kHz 50 C - Capacitance(pF) ISD-Source to Drain Current(A) VGS=0V 40 Ciss Coss Crss 30 20 10 0 0 2 4 6 8 10 0.6 o 0.4 T=150 C o T=25 C 0.2 0.1 0.2 VDS Drain-to-Source Voltage (V) Capacitance 0.3 0.4 0.5 0.6 0.7 0.8 VSD-Source-to-Drain Voltage(V) 0.9 Body diode forward voltage ID - Drain Current (A) 10 1 10 ms 100 ms 0.1 Limited by RDS(on) 1s 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe operating power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 325 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.3 WNM2021 Package outline dimensions SOT-323 Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.000 1.100 A1 0.000 0.050 0.100 A2 0.900 0.950 1.000 b 0.200 0.300 0.400 c 0.080 0.115 0.150 D 2.000 2.100 2.200 E 1.150 1.250 1.350 E1 2.150 2.300 2.450 e e1 0.650TYP 1.200 1.300 L 1.400 0.525REF L1 0.260 0.460 © 0e 8e Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.3