WNM2016-3/TR

WNM2016 WNM2016 Http://www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (mΩ) D 40 @ VGS=4.5V 20 S 47 @ VGS=2.5V 55 @ VGS=1.8V G SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 1 2 circuit. Standard Product WNM2016 is Pb-free and G S Halogen-free. Configuration (Top View) Features 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z WT6* 1 Small package SOT-23 Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch Will Semiconductor Ltd. WT6 = Device Code * = Month (A~Z) Marking Applications z 2 Order Information Device WNM2016-3/TR 1 Package SOT-23 Shipping 3000/Tape&Reel 2015/08/25 – Rev. 1.4 WNM2016 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TA=25°C Continuous Drain Current (TJ = 150 °C)a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current (TJ = 150 °C)b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C Pulsed Drain Current c Operating Junction and Storage Temperature Range ID PD ID PD Unit V 3.2 2.9 2.5 2.3 0.8 0.7 0.5 0.4 2.9 2.7 2.3 2.1 0.6 0.5 0.4 0.3 A W A W IDM 10 A TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 125 150 140 175 150 180 165 210 60 76 a Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2015/08/25 – Rev. 1.4 WNM2016 Electronics Characteristics o (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±8.0V VGS(TH) VGS = VDS, ID = 250uA 20 V 1 uA ±100 nA 0.6 1 V VGS = 4.5V, ID = 3.6A 40 47 VGS = 2.5V, ID = 3.1A 47 55 VGS = 1.8V, ID = 1.0A 55 66 VDS = 5 V, ID = 3.1A 8.5 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.4 mŸ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, 500 Output Capacitance COSS VDS = 10 V 62 Reverse Transfer Capacitance CRSS 58 Total Gate Charge QG(TOT) 8.5 Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.45 Gate-to-Source Charge QGS ID = 3.1 A 0.65 Gate-to-Drain Charge QGD 3.1 Turn-On Delay Time td(ON) 12 Rise Time tr VGS = 4.5 V, VDS = 10 V, 20.8 Turn-Off Delay Time td(OFF) RL=3.5Ÿ, RG=6 Ÿ 38.8 Fall Time tf pF nC SWITCHING CHARACTERISTICS ns 10.8 DRAINíSOURCE DIODE CHARACTERISTICS Forward Recovery Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 1.0A 3 0.62 1.5 V 2015/08/25 – Rev. 1.4 WNM2016 Typical Performance Graph 20 20 VGS=3.0V to 5.0V o T=-55 C 15 VGS=2.0V ID-Drain Current(A) ID-Drain Current (A) 16 12 8 VGS=1.5V 4 0 0.0 0.5 1.0 1.5 2.0 10 0 0.0 2.5 0.5 Output Characteristics 1.5 2.0 2.5 Transfer Characteristics 160 0.15 ID=3.5A RDS(on)-ON Resistance (ohm) RDS(on)-On-Resistance (mohm) 1.0 VGS-GATE-to-source Voltage(V) VDS-Drain-to-source Voltage(V) 120 VGS=1.5V 80 VGS=2.0V 40 0 VGS=4.0V 0 2 4 6 8 0.12 0.09 0.06 0.03 1.0 10 60 VGS=4.5V,ID=3.5A 55 50 45 40 35 0 50 100 150 o 2.5 3.0 3.5 4.0 VDS=3.5V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -50 0 50 100 150 o Temperature( C) Temperature( C) Rds(on) vs. Junction Temperature Will Semiconductor Ltd. 2.0 Rds(on) vs. Gate to Source Voltage VGS(th)-Gate Threshold Voltage (V) Rds(on) vs. Drain Current -50 1.5 VGS-Gate-to-source Voltage(V) ID-Drain Current(A) RDS(on)-ON-Resistance (mohm) o T=125 C o T=25 C 5 Threshold voltage vs. Temperature 4 2015/08/25 – Rev. 1.4 WNM2016 VGS=0V F=1MHz 2.0 IS-source Current(A) C-Capacitance (pF) 600 450 Ciss Coss Crss 300 150 0 0 5 10 15 1.5 1.0 0.5 0.0 0.3 20 0.4 VDS-Drain-to-source Voltage(V) 0.5 0.6 0.7 VSD-source-to-Drain Voltage(V) Capacitance Source to Drain Diode Forward Voltage 10 Limited by RDS(on)* 10 100 μs 8 1 ms I D - Drain Current (A) Power (W) 0.8 6 4 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse 2 TA = 25 °C BVDSS Limited 0 0.01 0.1 1 10 100 0.01 0.1 1000 Single Pulse Power 100 1 10 VDS - Drain-to-Source Voltage (V) Time (s) Safe Operating Area 1 1 TRANSIENT THERMAL RESISTANCE Normalized Effective Transient ThermalEFFECTIVE Impedance r(t), NORMALIZED Duty Cycle = 0.5 0.5 0.2 D = 0.5 0.2 0.10.1 0.10.05 0.05 0.02 0.2 R θJA (t) = r(t) * RθJA R θJA = 270 °C/W Notes: 0.1 0.05 P(pk)PDM 0.02 0.01 0.01 t1 Single Pulse t 2t1 t TJ - TA = P *2RθJA (t)t1 1. Duty Cycle, D = Duty Cycle, D = t /t2t2 2. Per Unit Base =1 RthJA = 70 °C/W 0.02 0.005 0.002 0.001 0.0001 0.01 10 -4 0.001 Single Pulse 10 -3 0.01 0.1 1 10 t1 , TIME (sec) 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA(t) 100 4. Surface Mounted 100 300 1000 Transient Thermal Response Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.4 WNM2016 Package Outline Dimension SOT-23 Symbol Dimensions In Millimeters Min. Max. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950 (Typ.) 1.800 L L1 ș Will Semiconductor Ltd. 2.000 0.550 (Typ.) 0.300 0 o 0.500 8o 6 2015/08/25 – Rev. 1.4