WPM3401-3/TR

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET VDS (V) www.sh-willsemi.com Max RDS (on) (mΩ) -30 53@ VGS=-10V 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimize onstate resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where 1 2 G S high-side switching. Pin configuration (Top view) Features 3  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23-3L WP1U 1 2 WP1= Specific Device Code U Applications  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch Will Semiconductor Ltd. = Date Code Marking Order information 1 Device Package Shipping WPM3401-3/TR SOT-23-3L 3000/Reel&Tape 2016/04/25 – Rev.2.5 WPM3401 Absolute Maximum ratings Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C a PD TA=70°C TA=25°C b Maximum Power Dissipation Pulsed Drain Current ID TA=70°C Maximum Power Dissipation Continuous Drain Current TA=25°C a ID TA=70°C TA=25°C b PD TA=70°C c Unit V -5.5 -4.6 -4.4 -3.6 1.7 1.3 1.1 0.8 -5.0 -4.2 -4.0 -3.4 1.4 1.0 0.9 0.6 A W A W IDM -20 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 70 90 95 125 85 105 120 150 40 60 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width