WPM2026-3/TR

WPM2026 WPM2026 Http://www.sh-willsemi.com Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) () 0.056@ VGS=̢4.5V -20 0.069@ VGS=̢2.5V 0.086@ VGS=̢1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2026 is Pb-free and 1 2 G S Halogen-free. Pin configuration (Top view) Features 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 W26* 2 1 W26 = Device Code * = Month (A~Z) Marking Applications Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Device WPM2026-3/TR Will Semiconductor Ltd. 1 Package Shipping SOT-23 3000/Reel&Tape 2016/04/25 – Rev.2.4 WPM2026 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V -3.2 -2.9 -2.6 -2.3 0.9 0.8 0.6 0.5 -2.9 -2.7 -2.3 -2.1 0.7 0.6 0.5 0.4 A W A W Pulsed Drain Current c IDM -12 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t  10 s Steady State t  10 s Steady State Steady State RJA RJA Typical Maximum 105 130 120 155 130 160 145 190 40 60 RJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2016/04/25 – Rev.2.4 WPM2026 o Electronics Characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -20 V Zero Gate Voltage Drain Current IDSS VDS =-16 V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±V ±100 nA VGS(TH) VGS = VDS, ID = -250uA -0.6 -1.0 V VGS = -4.5V, ID = -3.2A 56 65 VGS = -2.5V, ID = -2.8A 69 81 VGS = -1.8V, ID = -2.3A 86 110 VDS = -5 V, ID = -3.6A 10 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS -0.35 m S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 11 Threshold Gate Charge QG(TH) VGS = -4.5 V, VDS = -10 V, 0.6 Gate-to-Source Charge QGS ID = -2.7A 1.3 Gate-to-Drain Charge QGD 2.7 Turn-On Delay Time td(ON) 16 Rise Time tr VGS = -4.5 V, VDD = -10 V, 20 Turn-Off Delay Time td(OFF) RL=3.5 , R G=6  65 Fall Time tf VGS = 0 V, f = 1.0 MHz, VDS = -10 V 1130 pF 120 nC SWITCHING CHARACTERISTICS ns 15 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -1.0A 3 -0.62 -1.5 V 2016/04/25 – Rev.2.4 WPM2026 o Typical Characteristics (Ta=25 C, unless otherwise noted) 20 VGS=-3.0 ~ -4.5V VGS=-2.5V -IDS-Drain to Source Current(A) -IDS-Drain-to-Source Current (A) 20 15 VGS=-2.0V 10 VGS=-1.5V 5 VGS=-1.0V 0 0 1 2 3 4 VDS= -5V 16 o T=-50 C 12 5 o T=125 C 8 o T=25 C 4 0 0.0 0.5 Output characteristics RDS(on)- On-Resistance (m:) RDS(on)- On-Resistance(m:) 2.0 2.5 3.0 3.5 90 100 VGS=-2.5V 80 VGS=-4.5V 60 40 0 2 4 6 8 -IDS-Drain-to-Source Current(A) 80 IDS=-3.2A 70 IDS=-2.0A 60 50 40 1.0 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VGS-Gate-to-Source Voltage(V) On-Resistance vs. Drain current On-Resistance vs. Gate-to-Source voltage 80 0.8 70 -VGS(TH) Gate Threshold Voltage (V) RDS(on)- On-Resistance (m:) 1.5 Transfer characteristics 120 20 1.0 -VGS-Gate-to-Source Voltage(V) -VDS-Drain-to-Source Voltage(V) VGS=-4.5V,ID=-3.2A 60 50 40 -50 -25 0 25 50 75 100 125 150 IDS=-250uA 0.6 0.5 0.4 0.3 -50 o Temperature( C) -25 0 25 50 75 100 125 150 o Tem perature ( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 0.7 Threshold voltage vs. Temperature 4 2016/04/25 – Rev.2.4 WPM2026 1750 1.5 1500 -ISD-Source to Drain Current(A) VGS=0V C - Capacitance(pF) F=1MHz 1250 1000 750 Ciss Coss Crss 500 250 0 0 4 8 12 16 1.2 0.9 o T=150 C o T=25 C 0.6 0.3 0.2 20 0.3 -VDS Drain-to-Source Voltage (V) 0.4 0.5 0.6 0.7 Capacitance Body diode forward voltage 100 10 Limited by rDS(on) 8 I D - Drain Current (A) 10 Power (W) 0.8 -VSD-Source-to-Drain Voltage(V) 6 4 TA = 25_C 2 100 ms, 10 ms 1 1 ms 10 ms 100 ms TA = 25_C Single Pulse 0.1 dc, 100 s, 10 s, 1 s 0 0.01 0.1 0.01 10 1 100 600 0.1 1 Time (sec) 10 100 VDS - Drain-to-Source Voltage (V) Safe operating area Single pulse power 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 155_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 5 2016/04/25 – Rev.2.4 WPM2026 Package outline dimensions SOT-23 Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 A2 0.900 0.975 1.050 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 E1 2.250 2.400 2.550 e e1 0.950TYP 1.800 1.900 L 2.000 0.550REF L1 0.300 0.500 © 0e 8e Will Semiconductor Ltd. 6 2016/04/25 – Rev.2.4 WPM2026 Suggested Land Pattern SOT-23 Y Z C X Will Semiconductor Ltd. E Dimensions SOT-23(mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 7 2016/04/25 – Rev.2.4