WPM2019-3/TR

WPM2019 WPM2019 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) (ȍ) D 0.480@ VGS=̢4.5V -20 0.620@ VGS=̢2.5V S 0.780@ VGS=̢1.8V G SOT-523 Descriptions The WPM2019 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench 3 technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2019 is Pb-free and Halogen-free. 1 2 G S Features Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-523 3 P9* 2 1 P9 =Device Code * = Month(A~Z) Applications Marking z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Will Semiconductor Ltd. Order information 1 Device Package Shipping WPM2019-3/TR SOT-523 3000/Reel&Tape 2015/08/25 – Rev. 1.4 WPM2019 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±5 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID PD ID PD Unit V -0.73 -0.62 -0.58 -0.50 0.38 0.28 0.24 0.18 -0.61 -0.55 -0.49 -0.44 0.27 0.22 0.17 0.14 A W A W Pulsed Drain Current c IDM -1.2 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 285 325 355 440 395 460 465 560 280 320 a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2015/08/25 – Rev. 1.4 WPM2019 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS =-16 V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±5V VGS(TH) VGS = VDS, ID = -250uA -20 V -1 uA  -5 uA -0.65 -0.90 V VGS = -4.5V, ID = -0.45A 480 810 VGS = -2.5V, ID = -0.35A 620 1050 VGS = -1.8V, ID = -0.25A 780 1300 VDS = -5 V, ID =-0.45A 1.25 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance R DS(on) gFS -0.40 mŸ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 74.5 Output Capacitance COSS Reverse Transfer Capacitance CRSS 10.2 Total Gate Charge QG(TOT) 1.8 Threshold Gate Charge QG(TH) VGS = -4.5 V, VDS = -10 V, 0.12 Gate-to-Source Charge QGS ID = -0.45A 0.18 Gate-to-Drain Charge QGD VGS = 0 V, f = 100KHz, VDS = pF 10.8 -10 V nC 0.74 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 45 Rise Time tr VGS = -4.5 V, VDS = -10 V, 140 Turn-Off Delay Time td(OFF) ID=-0.45A, RG=6 Ÿ 1500 Fall Time tf ns 2100 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -0.15A 3 -0.50 -0.65 -1.50 V 2015/08/25 – Rev. 1.4 WPM2019 Typical Characteristics (Ta=25oC, unless otherwise noted) 1500 VGS= -2.5 ~ -5V VGS= -2.0V VDS= -5V -IDS - Drain Current (A) -IDS_Drain to Source Current (A) 2.0 1.5 VGS= -1.5V 1.0 0.5 1200 1 2 3 4 0 T=25 C 600 300 0 T=125 C 0 0.0 0.0 0 0 T=-50 C 900 5 0.3 -VDS_Drain to Source Voltage (V) RDS(on)- On-Resistance (m:) RDS(on)- On-Resistance (m:) 800 VGS=-2.5V 600 VGS=-4.5V 400 0.6 1.2 1.5 1.8 Transfer characteristics 1000 0.4 0.9 -VGS - Gate to Drain Voltage (V) Output characteristics 200 0.2 0.6 0.8 1400 IDS=-0.45A 1200 1000 800 600 400 200 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS-Gate to Source Voltage(V) IDS-Drain to Source Current (A) On-Resistance vs. Gate-to-Source voltage On-Resistance vs. Drain current -VGS(TH) - Threshold Voltage (V) RDS(on)- On-Resistance (m:) 700 VGS=-4.5V IDS=-0.45A 600 500 400 300 -50 0 50 100 150 IDS= -250uA 0.5 0.4 0.3 -25 0 Temperature ( C) 0 25 50 75 100 125 150 0 Temperature ( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 0.6 Threshold voltage vs. Temperature 4 2015/08/25 – Rev. 1.4 WPM2019 250 -ISD - Source to Drain Current (A) 120 90 60 Cin Cout Crss 30 0 0 2 4 6 8 200 0 T=125 C 150 0 T=25 C 100 50 0.4 10 0.5 0.6 0.7 0.8 0.9 -VSD - Source to Drain Voltage(V) -VDS - Drain to Source Voltage (V) Capacitance Body diode forward voltage 10.00 14 TJ(Max)=150°C, TA=25°C TJ(Max)=150°C TA=25°C 12 -ID (Amps) 10 Power (W) 8 6 4 1.00 100μs 1ms RDS(ON) limited 0.10 10ms 2 0.1s DC 0 0.0001 0.001 0.01 0.1 1 10 1s 10s 0.01 100 0.1 Pulse Width (s) 1 10 10 100 -VDS (Volts) Safe operating power Single pulse power Zθ JA Normalized Transient Thermal Resistance C-Capacitance (pF) VGS=0 f=100KHZ D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=440°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.4 WPM2019 Package outline dimensions SOT-523 Symbol Dimensions in millimeter Min. Typ. Max. A 0.700 0.800 0.900 A1 0.000 0.050 0.100 A2 0.700 0.750 0.800 b1 0.150 0.200 0.250 b2 0.250 0.300 0.350 c 0.100 0.150 0.200 D 1.500 1.600 1.700 E 0.700 0.800 0.900 E1 1.450 1.600 1.750 e e1 0.500TYP 0.900 1.000 L 1.100 0.400REF L1 0.260 0.460 © 0e 8e Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.4