WPM1480-3/TR

WPM1480 WPM1480 Http://www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3 The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPM1480 is Pb-free. 1 2 SC−70/SOT−323 Features 9%5'66 20 V 5'6RQ7\S 110 m¡ @ 4.5 V 150 m¡ @ 2.5 V P−Channel MOSFET S Application G z Li-Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products D Absolute Maximum Ratings (TA=25 unless otherwise specified) 3DUDPHWHU 6\PERO VDS Drain-Source voltage VGS Gate-Source Voltage Steady-State TA=25ć ID Continuous Drain Steady-State TA=70ć CurrentA TA=25ć t ̰5s IDM Pulse Drain Current B Tp=10us PD Power Dissipation B TA=25ć TA=70ć TJ Operating Junction Temperature Range Tstg Storage Temperature Range 9DOXH 8QLWV -20 V ±8 V -1.4 A -1.1 -1.5 -3.0 A 0.29 W 0.19 -55~150 ć Drain 3 TS M 2 1 Gate Source TS = Specific Device Code M= Date Code Order information 3DUW1XPEHU WPM1480-3/TR Will Semiconductor Ltd. 3DUW1XPEHU SOT-323/SC-70 1 6KLSSLQJ 3000Tape&Reel 2015/08/25 – Rev. 1.4 WPM1480 Electrical Characteristics OFF Symbol BVDSS Parameter Drain-Source Voltage Test conditions ID=-250A, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-body Leakage Current VDS=0V, VGS=f8V Min. Typ. Max. Units -20 V -1 A -5 A ±100 nA Parameter Gate Threshold Voltage Test conditions VDS=VGS, ID=-250­A VGS= -4.5V, ID= -1.0A VGS= -2.5V, ID= -0.5A VGS= -1.8V, ID= -0.3A Min. Typ. Max. Units -0.4 -0.6 -1.0 V 110 255 m  150 355 m  190 405 m  VDS= -16V, VGS=0V TC=25ć TC=55ć ON Symbol VGS(th) RDS(ON) Static Drain-Source On resistance Dynamic Symbol gFS Ciss Coss Crss Rg Parameter Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Test conditions VDS= -10V, ID = -1A VDS=0V, VGS=0V, f=1MHz Min. Typ. Max. Units 4 6 S 480 pF 58 pF pF 51 12  Test conditions Min. Typ. Max. Units VDS= -10V, VGS=0V, f=1MHz Switching Symbol Parameter Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On Delay Time tr Turn-On Rise Time tD(off) Turn-Off Delay Time tf Turn-Off Fall Time 6.5 VGS= -4.5V, ID = -1.2A, VDS= -10V VGS= -4.5V, VDS = -10V, ID= -1.2A, RGEN=6 0.3 nC nC 0.7 8.0 nC 6.0 ns 42 ns 7.0 ns ns Source Drain Diode Symbol Parameter VSD Diode Forward Voltage Is Maximum Body-diode Continuous Current trr Body-diode Reverse Recovery Time Qrr Body-diode Reverse Recovery Charge Will Semiconductor Ltd. Test conditions IS= -1A, VGS=0V Is= -1.0A, di/dt=100A/s 2 Min. Typ. Max. Units -0.79 -1.5 V -1 A 30 ns 12 nC 2015/08/25 – Rev. 1.4 WPM1480 Thermal Characteristic Symbol Parameter RJA Junction to Ambient A RJL Junction to Lead C Typ. 250 345 80 t  5s Steady-State Steady-State Max. 375 430 100 Unit. ć/W ć/W ć/W A: Surfacemounted on FR4 board using 1ͳsq pad size (Cu area = 1.127 in sq [1 oz] including traces). B: Repetitive rating, pulse width limited by junction temperature. C: The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient Typical Performance Characteristis 4 TJ = 25°C VGS = −6 V to −3 V VGS = −2.4 V −2.2 V −2 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 4 3 −1.8 V 2 −1.6 V 1 −1.4 V VDS ≥ −10 V 3 2 TC = −55°C 1 25°C 100°C −1.2 V 0 1 2 3 4 5 6 7 0 0.5 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 1.5 2 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0.5 ID = −1.0 A TJ = 25°C 0.4 0.3 0.2 0.1 0 1 3 5 2 4 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 6 0.225 TJ = 25°C 0.2 0.175 VGS = −2.5 V 0.15 0.125 VGS = −4.5 V 0.1 0.075 0.5 1.5 2.5 3.5 −ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage Will Semiconductor Ltd. 3 3 2015/08/25 – Rev. 1.4 WPM1480 10000 ID = −1.0 A VGS = −4.5 V VGS = 0 V −IDSS, LEAKAGE (nA) 1.4 1.2 1 1000 10 −25 0 25 50 75 100 125 150 6 4 8 10 12 14 16 18 20 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage VGS=0V F=1MHz Ciss 450 300 150 0 2 −TJ, JUNCTION TEMPERATURE (°C) 600 Coss 0 Crss 10 5 15 15 5 QT −VGS −VDS 4 12 9 3 QGS QGD 6 2 1 0 3 ID = −1.0 A TJ = 25°C 0 1 2 3 4 0 20 -VDS-Drain-to-source Voltage(V) Figure 7. Capacitance Variation QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 2.5 −IS, SOURCE CURRENT (AMPS) 1000 VDD = −10 V ID = −1.2 A VGS = −4.5 V 100 t, TIME (ns) TJ = 100°C 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.6 −50 C-Capacitance(pF) TJ = 150°C 0.8 −VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 td(OFF) tf tr td(ON) 10 10 2 1.5 1 0.5 0 0.3 1 1 VGS = 0 V TJ = 25°C 100 0.5 0.7 0.9 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current Will Semiconductor Ltd. 4 2015/08/25 – Rev. 1.4 WPM1480 㺘 എ⍱✺䈅傼ᶑԦ ᰐ䫵⭥䭰ӗ૱ എ⍱✺ᶑԦ ກሱփ৊ᓖt2.5 mm ᡆກሱփփ〟 t350 mm3 ກሱփ৊ᓖ< 2.5 mm фກሱփփ〟 < 350 mm3 ⑙ᓖкॷ䙏⦷ 3 °C/second max. 亴✝⑙ᓖ -վ⑙ (Ts(min)) -儈⑙ m(Ts(ax)) -ᰦ䰤 (վ⑙ࡠ儈⑙) (ts) 150 °C 200 °C 60-180 seconds Ӿ亴✝⑙ᓖTs(max)ࡠ㔤 ᤱ⑙ᓖTL - ⑙ॷ䙏⦷ 3 °C/second max. Time maintained above: - ⑙ᓖ (TL) - ᰦ䰤(tL) 217 °C 60-150 seconds ⌒ጠ⑙ᓖ (Tp) 245+0/-5 °C 260+0/-5 °C 㔤ᤱ൘⌒ጠ⑙ᓖⲴᰦ䰤 Temperature (tp) 10-30seconds 20-40seconds 䱽⑙䙏⦷ 6 °C/second max. Ӿ 25 ǂCࡠ⌒ጠ⑙ᓖⲴ ᰦ䰤 8 minutes max. ⌘˖ᡰᴹⲴ⑙ᓖ䜭ᱟᤷṧ૱к䜘ກሱփ㺘䶒Ⲵ⑙ᓖDŽ Welding temperature curve Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.4 WPM1480 Packaging Information SOT-323/SC-70 Package Outline Dimension A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G 0.05 (0.002) J N C INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN K H DIM A B C D G H J K L N S SOLDERING FOOTPRINT 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.4