WNM6001-3/TR

WNM6001 WNM6001 Http//:www.sh-willsemi.com Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) 60 Rds(on) (Ω) 1.4@ VGS=10V 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions SOT-23 The WNM6001 is N-Channel enhancement D 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 1 G circuit. Standard Product WNM6001 is Pb-free and 2 S Halogen-free. Pin configuration (Top view) Features 3  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23 W61* 2 1 W61 = Device Code * = Month (A~Z) Marking Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Will Semiconductor Ltd. Order information Device Package Shipping WNM6001-3/TR SOT-23 3000/Reel&Tape 1 Mar, 2018 - Rev.1.1 WNM6001 Absolute Maximum ratings Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID TA=70°C Maximum Power Dissipation Continuous Drain Current TA=25°C ad TA=25°C ad TA=70°C TA=25°C bd Maximum Power Dissipation PD ID TA=70°C TA=25°C bd PD TA=70°C Pulsed Drain Current c Unit V 0.50 0.44 0.40 0.35 0.69 0.53 0.44 0.34 0.47 0.42 0.38 0.33 0.60 0.47 0.39 0.30 A W A W IDM 1.0 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 140 180 176 232 165 205 198 261 100 120 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width