WNM2030-3/TR

WNM2030 WNM2030 Http://www.sh-willsemi.com Single N-Channel, 20V, 0.95A, Power MOSFET VDS (V) D Rds(on) (ȍ) 0.210@ VGS=4.5V S G 0.250@ VGS=2.5V 20 SOT-723 0.305@ VGS=1.8V ESD Protected Descriptions D 3 The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 G with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 2 S circuit. Standard Product WNM2030 is Pb-free and Halogen-free. Pin configuration (Top view) Features 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z 2* 1 Small package SOT-723 2 2 = Device Code * = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Will Semiconductor Ltd. Order information 1 Device Package Shipping WNM2030-3/TR SOT-723 8000/Reel&Tape 2015/08/24 – Rev. 1.6 WNM2030 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS f6 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID PD ID PD Unit V 0.95 0.88 0.76 0.71 0.43 0.37 0.28 0.24 0.80 0.75 0.64 0.60 0.31 0.27 0.20 0.17 A W A W Pulsed Drain Current c IDM 1.5 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 225 285 270 330 330 400 390 460 230 265 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width