WNM2016A-3/TR

WNM2016A WNM2016A Single N-Channel, 20V, 4.7A, Power MOSFET VDS (V) Http://www.sh-willsemi.com Typical RDS(on) (mΩ) 33@ VGS=4.5V 20 39@ VGS=3.1V 44@ VGS=2.5V 66@ VGS=1.8V SOT-23 Description D 3 The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2016A is Pb-free and Halogen-free. 1 2 G S Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23 NEYW NE = Device Code Y = Year W = Week(A~Z) Marking Applications Order information    DC/DC converters Device Package Shipping WNM2016A-3/TR SOT-23 3000/Tape&Reel Power supply converters circuit Load/Power Switching for portable device Will Semiconductor Ltd. 1 Nov,2019- Rev.1.0 WNM2016A Absolute Maximum ratings Parameter Symbol Maximum Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C Pulsed Drain Current c 3.7 IDM Maximum Power Dissipation b TA=25°C Operating Junction Temperature Storage Temperature Range A 24 1.4 PD TA=70°C V 4.7 ID TA=70°C Unit W 0.9 TJ -55 to 150 °C TSTG -55 to 150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Lead Thermal Resistance Symbol t ≤ 10 s Steady State Steady State Typical Maximum 72 90 98 122 42 54 RθJA RθJL Unit °C/W Note: a. The value of RθJA is measured with the device mounted on 1-inch2 (6.45cm2) with 2oz.(0.071mm thick) Copper pad on a 1.5*1.5 inch2, 0.06-inch thick FR4 PCB, in a still air environment with TA =25°C. The value in any given application is determined by the user's specific board design b. The power dissipation PD is based on Junction-to-Ambient thermal resistance RθJA t≤10s value and the TJ(MAX)=150°C. c. Repetitive rating, ~10us pulse width, duty cycle ~1%, keep initial TJ =25°C, the maximum allowed junction temperature of 150°C. d. The static characteristics are obtained using ~380us pulses, duty cycle ~1%. Will Semiconductor Ltd. 2 Nov,2019- Rev.1.0 WNM2016A Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =16V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±12V VGS(TH) VGS = VDS, ID = 250uA 20 V 1 uA ±100 nA 0.65 1.0 V VGS = 4.5V, ID = 4.7A 34 42 VGS = 3.1V, ID = 3.5A 39 52 VGS = 2.5V, ID = 2.5A 44 63 VGS = 1.8V, ID = 2.0A 66 118 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance RDS(on) 0.45 mΩ CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.3 Gate-to-Source Charge QGS ID = 4.7A 0.8 Gate-to-Drain Charge QGD 1.0 Turn-On Delay Time td(ON) 5.3 Rise Time tr VGS =4.5 V, VDS = 10V, Turn-Off Delay Time td(OFF) RL=3.5Ω , RG=6Ω Fall Time tf VGS = 0V, f = 1.0MHz, VDS = 10 V 247 53 pF 36 4.2 nC SWITCHING CHARACTERISTICS 12.6 ns 25 9.9 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 1A 3 0.7 1.2 V Nov,2019- Rev.1.0 WNM2016A 15 20 Typical Characteristics (Ta=25oC, unless otherwise noted) 30 10 VGS=5V VDS=2V VGS=4V 25 IDS -Drian to Source Current(A) 10 20 VGS=2V VGS=3V 15 10 VGS=1.5V 5 0 0.0 0.5 1.0 1.5 2.0 8 6 o T=150 C 4 o T=25 C 2 o T=-50 C 0 0.0 2.5 0.5 1.0 1.5 2.0 Output Characteristics Transfer Characteristics 200 200 ID=4.7A 180 160 140 VGS=1.8V 120 100 VGS=2.5V 80 60 40 20 0 2.5 VGS -Gate to Source Voltage(V) VDS-Drain-to-Source Voltage(V) RDS(ON)-Resistance (mW) 5 VDS-Drain-to-Source Voltage(V) 1 2 3 4 5 150 100 50 VGS=4.5V VGS=3.1V 6 7 8 9 0 1.0 10 1.5 On-Resistance vs. Drain Current VGS=4.5V ID =4.7A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 3.0 3.5 1.2 ID=250uA 1.1 1.0 0.9 0.8 0.7 0.6 -50 150 -25 0 25 50 75 100 125 150 Temperature (oC) Temperature (oC) On-Resistance vs. Junction Temperature Will Semiconductor Ltd. 2.5 On-Resistance vs. Gate-to-Source Voltage 1.6 1.4 2.0 VGS-Gate to Source Voltage(V) IDS-Drain to Source Current(A) Normalized 0 Gate Threshold Voltage VGS=6V VGS=5.5V 0 ID-Drain-to-Source Current(A) =8V GS 2 RDS(ON)-Resistance (mW) VGS=10VV 4 RDSON-On Resistance Normalized IDS-Drain-to-Source Current (A) 6 Threshold Voltage vs. Temperature 4 Nov,2019- Rev.1.0 WNM2016A C-Capacitance(pF) 400 Ciss 300 200 0 Coss Crss 100 0 2 4 6 8 10 10 ISD-Source to Drain Current (A) 500 12 1 T=150oC 0.1 T=25oC 0.01 T=-50oC 0.001 0.2 14 0.3 0.4 Capacitance 0.6 0.7 TJ(Max)=150oC TA=25oC 8 6 4 1 1.2 1ms 10ms DC 0.1 1 10 0.01 0.01 100 0.1 Pulse Width(s) 100ms 1s 10s TJ(MAX)=150 C TA=25oC Single Pulse 2 1 10 100 VDS-Drain to Source Voltage(V) Single Pulse power VGS-Gate to Source Voltage (V) 1.1 100us o 0.1 1.0 Limit by Rdson 10 0.01 0.9 10 ID-Drain Current (A) 12 0 0.001 0.8 Body Diode Forward Voltage 14 Power(W) 0.5 VSD-Source to Drain Voltage (V) VDS-Source to Source Voltage(V) Safe Operating Power 4.5 4.0 VDS=10V ID=4.7A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate Charge Characteristics (nC) Gate Charge Characteristics Will Semiconductor Ltd. 5 Nov,2019- Rev.1.0 Normalized Effective Transient Thermal Impedance WNM2016A 10 In Descending Order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse 1 0.1 0.01 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Transient Thermal Response (Junction-to-Ambient) Will Semiconductor Ltd. 6 Nov,2019- Rev.1.0 WNM2016A PACKAGE OUTLINE DIMENSIONS SOT-23 D b Ⅰ 1. K E E1 2.(N/A) M e Ⅰ c e1 SIDE VIEW TOP VIEW 2.90 0.90 0.80 0.90 A A1 0.80 SIDE VIEW 0.95 RECOMMENDED LAND PATTERN(unit:mm) Symbol Dimensions in Millimeters Min. Typ. Max. A 0.89 1.10 1.30 A1 0.00 - 0.10 b 0.30 0.43 0.55 c 0.05 - 0.21 D 2.70 2.90 3.10 E 1.15 1.33 1.50 E1 2.10 2.40 2.70 e 0.95 Typ. e1 1.70 1.90 2.10 M 0.10 0.15 0.25 K 0.00 - 0.25 Will Semiconductor Ltd. 7 Nov,2019- Rev.1.0 WNM2016A TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 8 Q4 Nov,2019- Rev.1.0