WNM3013-3/TR

WNM3013 WNM3013 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET D VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 50 1.4@ VGS=4.5V S 1.9@ VGS=2.5V G 4.0@ VGS=1.8V SOT-723 ESD Rating: 2000V HBM D 3 Descriptions 1 G The WNM3013 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 2 S Pin configuration (Top view) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM3013 is Pb-free and Halogen-free. K* Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-723 K = Device Code * = Month (A~Z) Marking Order information Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.  Power supply converters circuit  Load/Power Switching for potable device Will Semiconductor Ltd. 1 Device Package Shipping WNM3013-3/TR SOT-723 8000/Reel&Tape Jan.2018 – Rev. 1.3 WNM3013 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 50 Gate-Source Voltage VGS ±20 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V 0.27 0.25 0.21 0.20 0.44 0.38 0.28 0.24 0.23 0.21 0.18 0.17 0.3 0.27 0.2 0.17 A W A W Pulsed Drain Current c IDM 1.0 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 225 285 270 330 330 400 390 460 230 265 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width