WS4601E-5/TR

WS4601 WS4601 80mΩ, Current Limited, Power Distribution Switch www.sh-willsemi.com Descriptions The WS4601 is high-side switch with ultra-low ON resistance P-MOSFET. Integrated current-limit function can limit inrush current for heave capacitive load, over load current, and short-circuit current to protect power source. SOT-23-5L The WS4601 is also integrated reverse protection function to eliminate any reverse current flow across the switch when the device is off. Output auto-discharge while the device shutdown made output voltage off quickly. Thermal shutdown function OUT 1 GND 2 FLG 3 5 IN 4 EN can protect the device and load. The WS4601 is available in SOT-23-5L package. Standard product is Pb-free and Halogen-free. Features Pin configuration (Top view)  Input voltage range : 2.5~5.5  Main switch RON : 80mΩ @ VIN=5V  Continue output current : 1.0A  Current limit threshold : 1.5A (Typ.)  Current limit accurate : +/-20%  Output short current : 0.7A (Typ.)  Auto discharge  Reverse block (No “body diode”)  Over temperature protection 4 5 4601 YYWW 1 3 2 4601 = Device code Applications YY = Year code  USB peripherals WW = Week code  USB Dongle  USB 3G data card  3.3V or 5V Power Switch  3.3V or 5V Power Distribution Will Semiconductor Ltd. Marking Order information 1 Device Package Shipping WS4601E-5/TR SOT-23-5L 3000/Reel&Tape May, 2016 - Rev. 1.2 WS4601 Typical Applications 5 VIN IN R1 10K～100K OUT 1 VOUT COUT 1uF CIN 1uF 3 Fault ON 4 FLG GND EN 2 OFF Pin Descriptions Pin Number Symbol Descriptions 1 OUT Output Pin 2 GND Ground 3 FLG Fault Flag Pin, Open-Drain, Active Low 4 EN Enable Pin, Active High 5 IN Input Pin Block Diagram Current Sense IN UVLO OUT Current Limit Driver EN Deglitch IN + OUT - FLG Reverse Voltage Protection Thermal Protection GND Will Semiconductor Ltd. 2 May, 2016 - Rev. 1.2 WS4601 Absolute maximum ratings Parameter Symbol Value Unit VIN -0.3～6.5 V OUT pin voltage range VOUT -0.3~6.5 V FLG pin voltage range VFLG -0.3~6.5 V EN pin voltage range VEN -0.3~6.5 IN pin voltage range Junction temperature -40~150 260 o Tstg -55 ~ 150 o HBM 8000 V MM 400 V HBM 4000 V MM 400 V TJ Lead temperature(Soldering, 10s) TL Storage temperature IN, OUT Pin ESD Ratings FLG, EN Pin ESD Ratings V o C C C These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Recommend Operating Conditions Parameter Supply input voltage range Operating ambient temperature Value VIN 2.5～5.5 TA Thermal Resistance Will Semiconductor Ltd. Symbol RθJA 3 Unit V o -40～85 250 C o C/W May, 2016 - Rev. 1.2 WS4601 o Electronics Characteristics (Ta=25 C, VIN=5V, CIN=COUT=1uF, unless otherwise noted) Parameter Symbol Conditions Quiescent supply current IQ IOUT=0, VIN=VEN=5V Shutdown current ISD VEN=0V Min. Typ. 48 Max. Units 60 uA 1 uA 1 uA VIN=VEN=0V, Reverse current IREV VOUT=5V, Current flow to VIN Main-FET ON resistance (1) Auto-discharge FET ON resistance RON RDCHG Over-current trip threshold IOC Short-circuit output current IOS Short circuit current limiting response time tSHORT VIN=VEN=5V, IOUT=500mA VEN=0V, VIN =VOUT=5V Current ramp (≤100A/s) on OUT OUT shorted to GND OUT connected to GND，CL=1uF EN input low voltage VIL VIN=5V EN input high voltage VIH VIN=5V OUT pin turn-on time after EN ON tON CL=1uF, RL=5ohm Fault flag output blanking time Over-temperature shutdown threshold 1.2 80 mΩ 65 Ω 1.5 1.8 A 0.7 A 3 us 0.4 1.6 V V 20 us tBLANK 8 ms TSD 160 o o C Over-temperature threshold hysteresis THYS 35 C Under voltage lock out threshold VUVLO 2.2 V Under voltage lock out hysteresis VUVLO-HYS 200 mV (1) Pulse test, TP=380us Will Semiconductor Ltd. 4 May, 2016 - Rev. 1.2 WS4601 o Typical Characteristics (Ta=25 C, unless otherwise noted) 105 120 o TA = 25 C IOUT=1A IOUT=0.5A 100 100 RON(m) RON(m) 95 110 90 85 90 80 80 70 75 60 70 2.5 3.0 3.5 4.0 4.5 5.0 VIN =5V IOUT=0.5A 50 -50 5.5 -25 INPUT VOLTAGE(V) 50 75 100 125 TEMPERATURE(C ) ON Resistance vs. Temperature 80 60 QUIESCENT CURRENT(uA) QUIESCENT CURRENT(uA) 25 0 ON Resistance vs. Input Voltage 70 60 50 40 30 20 NO LOAD 10 0 2.5 3.0 3.5 4.0 4.5 5.0 55 50 45 40 VIN=5V IO =0mA 35 30 -50 5.5 -25 INPUT VOLTAGE(V) 25 50 75 50 75 100 125 Quiescent current vs. Temperature 100 0.05 O TA = 25 C IO = 0mA 0.04 0.03 0.02 0.01 0.00 2.5 125 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE(V) 0 TEMPERATURE(C ) Shut-down Current vs. Temperature Will Semiconductor Ltd. 25 TEMPERATURE(C ) SHUTDOWN CURRENT(uA) 30 28 VIN=5V 26 IO =0mA 24 22 20 18 16 14 12 10 8 6 4 2 0 -50 -25 0 0 0 Quiescent current vs. Input Voltage SHUTDOWN CURRENT(uA) 0 Shut-down Current vs. Input Voltage 5 May, 2016 - Rev. 1.2 WS4601 2.0 o TA = 25 C 1.6 CURRENT LIMIT(A) CURRENT LIMIT(A) 1.8 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 VIN=5V -25 0 INPUT VOLTAGE(V) 100 125 Current Limit vs. Temperature 1.6 5.0 1.4 4.5 4.0 EN VIH EN VIL 1.2 VEN(V) 3.5 VOUT(V) 75 TEMPERATURE(C ) 5.5 3.0 2.5 2.0 1.0 0.8 1.5 VIN=5V O TA = 25 C 1.0 0.5 0 200 400 0.6 600 800 0.4 2.5 1000 1200 1400 3.0 Output Voltage vs. Output Current 14 14 12 10 8 6 4 VIN=5V IO =0mA 2 0 20 40 60 80 FLG DELAY TIME(mS) 16 -20 4.5 5.0 5.5 O TA = 25 C 12 10 8 6 4 2 0 2.5 100 0 TEMPERATURE(C ) IO = 0mA 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE(V) Fault Flag Blanking time vs. Temperature Will Semiconductor Ltd. 4.0 EN Threshold vs. Input Voltage 16 0 -40 3.5 INPUT VOLTAGE(V) IOUT(mA) FLG DELAY TIME(mS) 50 0 Current Limit vs. Input Voltage 0.0 25 Fault Flag Blanking time vs. Temperature 6 May, 2016 - Rev. 1.2 WS4601 Startup from Power ON Startup from Power ON Startup from Enable ON Startup from Enable ON Shutdown from Power OFF Shutdown from Enable OFF Current Limit Response Short Circuit Response Will Semiconductor Ltd. 7 May, 2016 - Rev. 1.2 WS4601 Operation Information Power Switch The power switch is an P-channel MOSFET with low RDS(ON) for power management or USB power distribution applications. The WS4601 has reverse voltage protection to prevents current flow from OUT to IN and IN to OUT when device is off. Current-Limit Protection The WS4601 provide current limit protection function to protect power source when over-current condition occurs. Short-Circuit Protection The WS4601 provide short circuit protection function. The output current will be limited to safe level. The short-circuit protection is used to reduce power dissipation of the device and protect power source during short-circuit condition. Fault indicate The FLG open drain output is asserted (active low) with 8ms(Typ.) delay when an over-current or over-temperature condition is encountered. The FLG signal will remain asserted until the over-current or over-temperature condition is removed. UVLO Protection To avoid malfunction of the WS4601 at low input voltages, an under voltage lockout is included that disables the device, until the input voltage exceeds 2.2V (Typ.). Shutdown Mode Drive EN to GND to place the WS4601 in shutdown mode. In shutdown mode, input current falls to smaller than 1uA. Thermal Shutdown o As soon as the junction temperature (T J) exceeds 160 C (Typ.), the WS4601 goes into thermal shutdown. In o this mode, the device is turned off and will turn on again until Junction temperature falls below 125 C (Typ.). Will Semiconductor Ltd. 8 May, 2016 - Rev. 1.2 WS4601 Application Information Input Capacitor A 1uF input bypass ceramic capacitor(CIN) from IN to GND, located near the WS4601 is strongly recommended to suppress the voltage overshooting during short circuit fault event. Without the bypass capacitor, the output short may cause sufficient ringing on the input (from supply lead inductance) to damage the device. Output Capacitor A low ESR, 150uF aluminum electrolytic or tantalum between OUT and GND is strongly recommended to reduce the voltage droop during hot-plug of downstream peripheral. Higher value output capacitor is better when the output load is heavy. Additionally, bypassing the output with a 1uF ceramic capacitor improves the immunity of the device to short-circuit transients. PCB Layout consideration The PCB layout should be carefully performed to maximize thermal dissipation and to minimize voltage drop. The following guidelines must be considered: 1. Please place the input capacitors near the IN pin as close as possible. 2. Output decoupling capacitors for load must be placed near the load as close as possible for decoupling high frequency ripples. 3. Locate WS4601 and output capacitors near the load to reduce parasitic resistance and inductance for excellent load transient performance. 4. The negative pins of the input and output capacitors and the GND pin must be connected to the ground plane of the load. 5. Keep IN and OUT traces as wide and short as possible. Will Semiconductor Ltd. 9 May, 2016 - Rev. 1.2 WS4601 Package outline dimensions SOT-23-5L Symbol Dimensions in millimeter Min. Typ. Max. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.500 c 0.100 - 0.200 D 2.820 2.900 3.020 E 1.500 1.600 1.700 E1 2.650 2.800 2.950 e 0.950(BSC) e1 1.800 - 2.000 L 0.300 - 0.600 θ 0° - 8° Will Semiconductor Ltd. 10 May, 2016 - Rev. 1.2