BZT52C5V6S

BZT52CxxxS Series 200mW Surface Mount Zener Diodes - 2.4V-51V Package outline Features • Silicon epitaxial planar chip structure. • Wide zener reverse voltage range 2.4V to 51V. • Small package size for high density applications. • Ideally suited for automated assembly processes. • Pb-free package is available • We declare that the material of product compliance with RoHS requirements. 0.071(1.80) 0.063(1.60) • Compliant to Halogen-free 0.016(0.40) 0.010(0.25) 0.055(1.40) 0.047(1.20) SOD-323 0.008(0.20) Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOD-323 • Terminals : Solder plated, solderable per 0.003(0.08) 0.039(1.00) 0.031(0.80) 0.108(2.75) 0.096(2.45) MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings (at T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol Forward voltage I F = 10 mA Power dissipation T A=25 ° C ( note 1) PD Thermal resistance Junction to ambient (note 1) Junction to case (note 1) R θJA R θJC MIN. TYP. VF Operating junction temperature range Storage temperature range MAX. UNIT 0.9 V 200 mW o 625 350 o C/W C/W TJ -55 +150 o C T STG -55 +150 o C Note 1: Mounted on FR-4 minimum pad www.fuxinsemi.com Page 1 Ver2.1 BZT52CxxxS Series 200mW Surface Mount Zener Diodes - 2.4V-51V Electrical characteristics (at T =25 C unless otherwise noted) o A Zener voltage Part No. Marking code Test current Zener impedance Leakage current Typical Temperature Typical Coefficent V Z @ I ZT I ZT Z ZT @ I ZT Z ZK @ I ZK I ZK IR VR Min.(V) Nom.(V) Max.(V) mA (Ω)Max (Ω)Max mA (uA)Max Volts @ I ZT O (mV/ C) BZT52C2V4S WX 2.2 2.4 2.6 5 100 600 1.0 50.0 1.0 -3.5 0 BZT52C2V7S W1 2.5 2.7 2.9 5 100 600 1.0 20.0 1.0 -3.5 0 BZT52C3V0S W2 2.8 3.0 3.2 5 95 600 1.0 10.0 1.0 -3.5 0 BZT52C3V3S W3 3.1 3.3 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 BZT52C3V6S W4 3.4 3.6 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 BZT52C3V9S W5 3.7 3.9 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 BZT52C4V3S W6 4.0 4.3 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 BZT52C4V7S W7 4.4 4.7 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 BZT52C5V1S W8 4.8 5.1 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 BZT52C5V6S W9 5.2 5.6 6.0 5 40 400 1.0 1.0 2.0 -2.0 2.5 BZT52C6V2S WA 5.8 6.2 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 BZT52C6V8S WB 6.4 6.8 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 BZT52C7V5S WC 7.0 7.5 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 BZT52C8V2S WD 7.7 8.2 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 BZT52C9V1S WE 8.5 9.1 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 BZT52C10S WF 9.4 10 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 BZT52C11S WG 10.4 11 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 BZT52C12S WH 11.4 12 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 BZT52C13S WI 12.4 13 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 BZT52C15S WJ 13.8 15 15.8 5 30 200 1.0 0.1 10.5 9.2 13.0 BZT52C16S WK 15.3 16 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 BZT52C18S WL 16.8 18 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 BZT52C20S WM 18.8 20 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 BZT52C22S WN 20.8 22 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 BZT52C24S WO 22.8 24 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 BZT52C27S WP 25.1 27 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 BZT52C30S WQ 28.0 30 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 BZT52C33S WR 31.0 33 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 BZT52C36S WS 34.0 36 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 BZT52C39S WT 37.0 39 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 BZT52C43S WU 40.0 43 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 BZT52C47S WV 44.0 47 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 BZT52C51S WW 48.0 51 54.0 2 100 750 1.0 0.1 38.0 10.0 12.0 Note: 1. Tested with pulses, period = 5ms, pulse width = 300us. 2. When provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only. 3. f=1KHz. www.fuxinsemi.com Page 2 Ver2.1 BZT52CxxxS Series 200mW Surface Mount Zener Diodes - 2.4V-51V Rating and characteristic curves FIG.1-EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE FIG. 2-TYPICAL FORWARD VOLTAGE 1000 1000 I F, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE( Ω ) T J = 25 OC I Z(AC) = 0.1 I Z(DC) f = 1kHz 100 I Z = 1mA 5mA 10 100 O 150 C 10 O 75 C 1.0 O 0 C 1.0 10 3.0 80 0.4 0.5 0.7 0.6 V Z, NOMINAL ZENER VOLTAGE (V) 0.8 0.9 1.0 FIG. 3-TYPICAL CAPACITANCE FIG. 4-TYPICAL LEAKAGE CURRENT 1000 0V BIAS 1V BIAS 100 BIAS AT 50% OF VZ NOM 10 100 I R, LEAKAGE CURRENT (uA) T A = 25 OC 10 1.0 O +150 C 0.1 0.01 +25 OC 0.001 0.0001 1.0 O -55 C 0.00001 10 4.0 70 0 10 20 30 40 50 70 60 V Z, NOMINAL ZENER VOLTAGE (V) V Z, NOMINAL ZENER VOLTAGE (V) FIG. 5-ZENER VOLTAGE VERSUS ZENER CURRENT (V Z UP TO 12V) FIG. 6-ZENER VOLTAGE VERSUS ZENER CURRENT(12V TO 75V) 100 100 O O T A = 25 C I Z, ZENER CURRENT (mA) T A = 25 C I Z, ZENER CURRENT (mA) 1.2 1.1 V F, FORWARD VOLTAGE (V) 1000 C J , CAPACITANCE(pF) O 25 C 10 1 0.1 0.01 10 1 0.1 0.01 0 2 4 6 8 10 12 10 V Z, ZENER VOLTAGE (V) 30 50 70 90 V Z, ZENER VOLTAGE (V) FIG. 7-STEADY STATE POWER DERATING POWER DISSIPATION (%) 100 80 60 40 20 0 0 25 50 75 100 125 150 O AMBIENT TEMPERATURE ( C) www.fuxinsemi.com Page 3 Ver2.1 BZT52CxxxS Series 200mW Surface Mount Zener Diodes - 2.4V-51V Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Suggested solder pad layout C A B Dimensions in inches and (millimeters) www.fuxinsemi.com PACKAGE A B C SOD-323 0.033 (0.83) 0.025 (0.63) 0.063 (1.60) Page 4 Ver2.1 BZT52CxxxS Series 200mW Surface Mount Zener Diodes - 2.4V-51V Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 o t25 C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o