ESD9L5.0ST5G-N

ESD9L5.0ST5G-N ESD Protection Diode »Features ■ 45Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1006 package ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.6pF typ.) ■ Protection one data/power line ■ IEC 61000-4-2 ±10kV contact ±15kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 3A(8/20μs) »Applications »Mechanical Data ■ Cell Phone Handsets andAccessories ■ DFN1006 package ■ Microprocessor based equipment ■ Molding compound flammability rating: UL 94V-0 ■ Personal Digital Assistants (PDA’s) ■ Packaging: Tape and Reel ■ Notebooks, Desktops, and Servers ■ RoHS/WEEE Compliant ■ Portable Instrumentation »Schematic & PIN Configuration DFN1006 Revision 2018 www.born-tw.com 1/4 ESD9L5.0ST5G-N »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs) PPP 45 Watts Peak Pulse Current ( tp =8/20μs )(note1) Ipp 3 A VESD 15 10 kV Lead SolderingTemperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ StorageTemperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2(Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Conditions Typical VRWM VBR IT=1mA Reverse LeakageCurrent IR VRWM=5V,T=25℃ Peak Pulse Current IPP Clamping Voltage Junction Capacitance Reverse BreakdownVoltage Min 6.0 Max Units 5.0 V 7.5 V 0.1 0.5 μA tp =8/20μs 3 A VC IPP=3A,tp=8/20μs 13 V Cj VR = 0V, f =1MHz 0.9 pF 0.6 »Electrical Parameters (TA = 25°C unless otherwisenoted) Symbol Parameter IPP Maximum Reverse Peak PulseCurrent VC Clamping Voltage @ IPP VRWM IR VBR IT I IF Working Peak ReverseVoltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM Breakdown Voltage @ IT IR V F IT V Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 ESD9L5.0ST5G-N »TypicalCharacteristics Figure 2: Power Derating Curve 10 110 100 Percent of Rated Power for I pp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 1 45w 8/20µswaveform 0.1 0.010.1 1 10 100 90 80 70 60 50 40 30 20 10 0 1,000 td – Pulse Duration - µs Ipp 80 Percent 100 e-1 50 40 td=Ipp/2 10 0 5 Revision 2018 10 15 150 16 14 12 10 Test Waveform Paramters tr=8µs td=20µs 8 6 4 0 125 18 Clamping Voltage–VC (V) 90 20 75 20 Waveform Paramters tr=8µs td=20µs 100 30 50 Figure 4: Clamping Voltage vs.Ipp 110 60 25 Ambient Temperature - TA (℃) Figure3: Pulse Waveform 70 0 Time (µs) 20 25 30 2 0 1 2 3 4 5 6 Peak Pulse Current–IPP (A) www.born-tw.com 3/4 ESD9L5.0ST5G-N »Outline Drawing – DFN1006 »Marking UB »Ordering information Order code ESD9L5.0ST5G-N Revision 2018 Package DFN1006 Base qty 10k www.born-tw.com Delivery mode Tape and reel 4/4