ESD9B3.3ST5G-N

ESD9B3.3ST5G-N ESD Protection Diode »Features ■ 80Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1006 package ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±15kV contact ±25kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 10A (8/20μs) »Applications »Mechanical Data ■ Cell Phone Handsets and Accessories ■ DFN1006 package ■ Microprocessor based equipment ■ Molding compound flammability rating: UL 94V-0 ■ Personal Digital Assistants (PDA’s) ■ Packaging: Tape and Reel ■ Notebooks, Desktops, and Servers ■ RoHS/WEEE Compliant ■ Portable Instrumentation »Schematic & PIN Configuration DFN1006 Revision 2018 www.born-tw.com 1/4 ESD9B3.3ST5G-N »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 80 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 10 A VESD 25 15 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=3.3V,T=25℃ Peak Pulse Current IPP tp =8/20μs Clamping Voltage1) VCL IPP=16A,tp=100ns Clamping Voltage 2) Max Units 3.3 V 3.8 V 0.1 0.2 μA 10 A 8 V IPP=5A,tp=8/20μs 6 V IPP=10A,tp=8/20μs 8 V VC Clamping Voltage 2) Dynamic resistance 1) RDYN Junction Capacitance Cj Ω 0.2 VR = 0V, f = 1MHz 15 12 pF »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol I PP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ I PP V RWM IR V BR IT I Parameter Working Peak Reverse Voltage V Maximum Reverse Leakage Current @ V RWM Breakdown Voltage @ IT Test Current Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 ESD9B3.3ST5G-N »Typical Characteristics Figure 2: Power Derating Curve 10 110 1 80w 8/20µ s waveform 0.1 0.01 0.1 1 10 100 Percent of Rated Power for Ipp P pp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 100 90 80 70 60 50 40 30 20 10 0 1,000 0 25 td – Pulse Duration - µs Figure3: Pulse Waveform Waveform Paramters tr=8µs td=20µs 90 Percent Ipp 80 e 50 40 td=Ipp/2 20 125 150 8 -1 30 100 9 Clamping Voltage–VC (V) 100 60 75 Figure 4: Clamping Voltage vs.Ipp 110 70 50 Ambient Temperature - TA (℃) 7 6 5 4 Test Waveform Paramters tr=8µs td=20µs 3 2 1 10 0 0 0 Revision 2018 5 10 15 Time (µs) 20 25 30 0 2 4 6 8 10 12 Peak Pulse Current–IPP (A) www.born-tw.com 3/4 ESD9B3.3ST5G-N »Outline Drawing – DFN1006 »Marking Pin 1 3E Pin 2 »Ordering information Order code ESD9B3.3ST5G-N Revision 2018 Package DFN1006 Base qty 10k www.born-tw.com Delivery mode Tape and reel 4/4