MMBT3906

MMBT3906 SOT-23 Plastic-Encapsulate Transistors(PNP) Transistors RHOS Features SOT-23  As complementary type the NPN transistor MMBT3904 is recommended  Epitaxial planar die construction Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Voltage -40 V 2. EMITTER VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ 3. COLLECTOR MARKING: 2A Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC=-10μA, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage VEBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA IEBO VEB=-5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC= -50mA 60 hFE(3) VCE=-1V, IC= -100mA 30 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB= -5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB=-5mA -0.95 V Emitter cut-off current DC current gain 300 Transition frequency fT VCE=-20V, IC=-10mA,f=100MHz Delay Time td VCC=-3V,VBE=-0.5V 35 nS Rise Time tr IC=-10mA, IB1=-IB2=-1mA 35 nS Storage Time ts VCC=-3V,IC=-10mA, 225 nS Fall Time tf IB1=-IB2=-1mA 75 nS CLASSIFICATION OF Rank Range Rev 8: Nov 2014 300 MHz hFE(1) O Y 100-200 200-300 www.born-tw.com Page 1 of 2 MMBT3906 Transistors Rev 8: Nov 2014 SOT-23 Plastic-Encapsulate Transistors(PNP) www.born-tw.com RHOS Page 2 of 2