MMBT2222A

MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors RHOS Features SOT-23  Epitaxial planar die construction  Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITTER VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 6 00 mA PC Total Device Dissipation 250 mW RθJA Thermal Resistance Junction to Ambient 500 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ 3. COLLECTOR MARKING: 1P Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Test conditions Min Typ Max Unit IC= 10μA, IE=0 75 V IC= 10mA, IB=0 40 V 6 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 0.01 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA hFE(1) DC current gain * hFE(2) hFE(3) * Collector-emitter saturation voltage VCE(sat) * Base-emitter saturation voltage VBE(sat) * Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=10V, IC= 150mA 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz 300 1 0.3 2.0 1.2 300 V V MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 nS 25 nS VCC=30V, IC=150mA IB1=-IB2=15mA 225 nS 60 nS *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. Rev 8: Nov 2014 www.born-tw.com Page 1 of 2 MMBT2222A Transistors Rev 8: Nov 2014 SOT-23 Plastic-Encapsulate Transistors(NPN) www.born-tw.com RHOS Page 2 of 2