M8050

M8050 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors SOT-23 RHOS Features  Complimentary to M8550  Collector Current: IC=0.8A Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Symbol 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency CLASSIFICATION OF hFE(2) Rev 8: Nov 2014 Symbols Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=35V, IE=0 VCE=20V, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=6V, IC=20mA,f=30MHz Limits Min 40 25 6 Max 100 100 45 80 40 V V V nA nA 400 0.50 1.20 150 RANK L H RANGE 80-350 350-400 www.born-tw.com Unit V V MHz Page 1 of 2 M8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Typical characteristics Rev 8: Nov 2014 www.born-tw.com Page 2 of 2