SI2302

SI2302 MOSFET N-Channel Enhancement-Mode MOSFET ROHS SOT-23 - Features  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA = 25o 2) ID 3 IDM 12 TA = 75 C Junction-to-Ambient Thermal Resistance (PCB mounted) o C 100 RthJA 3) W -55 to 150 2) Junction-to-Ambient Thermal Resistance (PCB mounted) A 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V 1.25 PD o Unit o C/W 166 Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. Electrical Characteristics ( Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbol Test Condition Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage 1) Gate Body Leakage 1) VGS = 0V, ID = 250uA V 20 VGS = 4.5V, I D = 3A 30 45 VGS = 2.5V, I D = 2.5A 37 59 mΩ RDS(on) VGS(th) Zero Gate Voltage Drain Current 0 Forward Transconductance BVDSS IDSS VDS =VGS, ID = 250uA VDS = 16V, V GS VDS = 16V, V 1.5 0.45 1 = 0V uA o GS = 0V TJ=55 IGSS VGS = ± 10V, VDS = 0V gfs VDS = 5V, I D = 3A V C 10 ±100 10 nA S Dynamic Total Gate Charge Qg 5.4 VDS = 10V, I D = 3A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time 1.6 12 VDD = 10V, RL=5.5 Ω tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss nC 0.65 VGS = 4.5V 36 ID ^ 3A,VGEN = 4.5V RG = 6 Ω ns 34 10 340 VDS = 10V, VGS = 0V Output Capacitance Coss pF 115 f = 1.0 MHz Reverse Transfer Capacitance 33 Crss Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) IS VSD IS = 1.0A, V GS = 0V 1.6 A 1.2 V Pulse test: pulse width