S8050

S8050 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors SOT-23 RHOS Features  Complimentary to S8550  Collector Current: IC=0.5A Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Symbol 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , 0.1 μA HFE(1) VCE=1V, IC= 50mA 120 HFE(2) VCE=1V, IC= 500mA 50 IC=0 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V fT Transition frequency CLASSIFICATION OF Rank Range Rev 8: Nov 2014 VCE=6V, f=30MHz IC= 20mA 150 MHz hFE(1) L H 120-200 200-350 www.born-tw.com Page 1 of 2 S8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Typical Characteristics Rev 8: Nov 2014 www.born-tw.com Page 2 of 2