SI2309

SI2309 MOSFET P-Channel Enhancement-Mode MOSFET SOT-23 - ROHS Features • Low RDS(on) @VGS=-10V • -5V Logic Level Control • P Channel SOT23 Package • Pb−Free, RoHS Compliant V(BR)DSS RDS(ON) Typ Applications ID Max • Load Switch • Switching Circuits 150mΩ @ 10V -60V -2A • High Speed line Driver 200mΩ @ 4.5V Order Information Product Package Marking Packing Min Unit Quantity SI2309 SOT23 N9AXX 3000PCS/Reel 3000PCS Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±20 V V(BR)DSS Drain-Source Breakdown Voltage -60 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 150 °C TA =25°C -8 A TA =25°C -2 TA =70°C -1.6 TA =25°C 1 TA =70°C 0.8 Mounted on Large Heat Sink IDM Pulse Drain Current Tested① ID Continuous Drain Current PD R JA Rev 8: Nov 2018 A Maximum Power Dissipation W Thermal Resistance Junction-Ambient www.born-tw.com 125 °C/W Page 1 of 4 SI2309 MOSFET Symbol P-Channel Enhancement-Mode MOSFET Parameter Condition ROHS Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=-250μA -60 -- -- V Zero Gate Voltage Drain Current(TA=25℃) VDS=-60V, VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current(TA=125℃) VDS=-60V, VGS=0V -- -- -100 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250μA -1.0 -1.5 -2.5 V RDS(ON) Drain-Source On-State Resistance② VGS=-10V, ID=-2A -- 150 200 mΩ RDS(ON) Drain-Source On-State Resistance② VGS=-4.5V, ID=-1A -- 200 300 mΩ -- 310 -- pF -- 22 -- pF -- 15 -- pF -- 5.4 -- nC -- 1.1 -- nC -- 1.6 -- nC -- 41 -- ns -- 22 -- ns - 25 -- ns -- 32 -- ns -- -- -1.4 A -- -0.84 -1.2 V V(BR)DSS IDSS Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=-30V, VGS=0V, f=1MHz VDS=-30V ID=-2A, VGS=-10V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time t d(off) Turn Off Delay Time tf Turn Off Fall Time VDD=-30V, ID=-2A, RG=3.3Ω, VGS=-10V Source Drain Diode Characteristics ISD Source drain current(Body Diode) VSD Forward on voltage② TA=25℃ Tj=25℃, ISD=-2A, VGS=0V Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. Rev 8: Nov 2018 www.born-tw.com Page 2 of 4 SI2309 MOSFET P-Channel Enhancement-Mode MOSFET ROHS -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) - Characteristics Typical -VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature -ID, Drain-Source Current (A) -VDS, Drain -Source Voltage (mV) Tc, Case Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) -VGS, Gate -Source Voltage (V) -ISD, Reverse Drain Current (A) -VGS, Gate -Source Voltage (V) -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Rev 8: Nov 2018 -VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.born-tw.com Page 3 of 4 SI2309 MOSFET P-Channel Enhancement-Mode MOSFET ROHS - -VGS, Gate-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance -VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage ZqJA Normalized Transient C, Capacitance (pF) Typical Characteristics Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2018 www.born-tw.com Page 4 of 4