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SI2302S

SI2302S

  • 厂商:

    BORN(伯恩)

  • 封装:

    SOT-23

  • 描述:

    MOSFETs N-Channel SOT-23

  • 数据手册
  • 价格&库存
SI2302S 数据手册
SI2302S MOSFET N-Channel Enhancement-Mode MOSFET ROHS SOT-23 Features • Low RDS(on) @VGS=4.5V • 3.3V Logic Level Control • N Channel SOT23 Package • Pb−Free, RoHS Compliant Applications V(BR)DSS RDS(ON) Typ ID Max • Load Switch for • DC/DC Converter 48mΩ @ 4.5V 20V • Switching Circuits 3A 55mΩ @ 3.3V •LED Driver Order Information Product Package Marking Packing Min Unit Quantity SI2302S SOT23 A2sHB 3000PCS/Reel 3000PCS Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±10 V V(BR)DSS Drain-Source Breakdown Voltage 20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 150 °C TA =25°C 12.8 A TA =25°C 3 TA =70°C 2.5 TA =25°C 1 TA =70°C 0.8 Mounted on Large Heat Sink IDM ID PD R JA Rev 8: Nov 2018 Pulse Drain Current Tested① Continuous Drain Current A Maximum Power Dissipation W Thermal Resistance Junction-Ambient www.born-tw.com 125 °C/W Page 1 of 4 SI2302S MOSFET Symbol N-Channel Enhancement-Mode MOSFET Parameter Condition ROHS Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 20 -- -- V Zero Gate Voltage Drain Current(TA=25℃) VDS=20V, VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(TA=125℃) VDS=16V, VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±10V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 0.4 0.6 1.0 V RDS(ON) Drain-Source On-State Resistance② VGS=4.5V, ID=3A -- 48 60 mΩ RDS(ON) Drain-Source On-State Resistance② VGS=3.3V, ID=2A -- 55 70 mΩ RDS(ON) Drain-Source On-State Resistance② VGS=2.5V, ID=1A -- 66 80 mΩ -- 160 -- pF -- 30 -- pF -- 25 -- pF -- 4.0 -- nC -- 0.4 -- nC -- 1.2 -- nC -- 8 -- ns -- 30 -- ns - 19 -- ns -- 28 -- ns -- -- 1.5 A -- 0.82 1.2 V V(BR)DSS IDSS Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=10V, VGS=0V, f=1MHz VDS=10V ID=3A, VGS=5V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time t d(off) Turn Off Delay Time tf Turn Off Fall Time VDD=10V, ID=2A, RG=3.3Ω, VGS=4.5V Source Drain Diode Characteristics ISD Source drain current(Body Diode) VSD Forward on voltage② TA=25℃ Tj=25℃, ISD=1A, VGS=0V Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. Page 2 ,Total 5 SI2302S MOSFET N-Channel Enhancement-Mode MOSFET ROHS ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature ID, Drain-Source Current (A) VDS, Drain -Source Voltage (mV) Tc, Case Temperature (°C) -ID - Drain Current (A) VGS, Gate -Source Voltage (V) Fig4. Drain -Source Voltage vs Gate -Source Voltage ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Rev 8: Nov 2018 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.born-tw.com Page 2 of 4 SI2302S MOSFET N-Channel Enhancement-Mode MOSFET ROHS C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT):mm Rev 8: Nov 2018 www.born-tw.com Page 4 of 4
SI2302S 价格&库存

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SI2302S
    •  国内价格
    • 50+0.12750
    • 500+0.11475
    • 5000+0.10625
    • 10000+0.10200
    • 30000+0.09775
    • 50000+0.09520

    库存:0

    SI2302S
      •  国内价格
      • 20+0.18041
      • 200+0.14260
      • 600+0.12160
      • 3000+0.09526
      • 9000+0.08428
      • 21000+0.07844

      库存:42328