SI2302S
MOSFET
N-Channel Enhancement-Mode MOSFET
ROHS
SOT-23
Features
• Low RDS(on) @VGS=4.5V
• 3.3V Logic Level Control
• N Channel SOT23 Package
• Pb−Free, RoHS Compliant
Applications
V(BR)DSS
RDS(ON) Typ
ID Max
• Load Switch for
• DC/DC Converter
48mΩ @ 4.5V
20V
• Switching Circuits
3A
55mΩ @ 3.3V
•LED Driver
Order Information
Product
Package
Marking
Packing
Min Unit Quantity
SI2302S
SOT23
A2sHB
3000PCS/Reel
3000PCS
Absolute Maximum Ratings
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above
the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VGS
Gate-Source Voltage
±10
V
V(BR)DSS
Drain-Source Breakdown Voltage
20
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-50 to 150
°C
TA =25°C
12.8
A
TA =25°C
3
TA =70°C
2.5
TA =25°C
1
TA =70°C
0.8
Mounted on Large Heat Sink
IDM
ID
PD
R JA
Rev 8: Nov 2018
Pulse Drain Current Tested①
Continuous Drain Current
A
Maximum Power Dissipation
W
Thermal Resistance Junction-Ambient
www.born-tw.com
125
°C/W
Page 1 of 4
SI2302S
MOSFET
Symbol
N-Channel Enhancement-Mode MOSFET
Parameter
Condition
ROHS
Min
Typ
Max
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
20
--
--
V
Zero Gate Voltage Drain Current(TA=25℃)
VDS=20V, VGS=0V
--
--
1
μA
Zero Gate Voltage Drain Current(TA=125℃)
VDS=16V, VGS=0V
--
--
100
uA
IGSS
Gate-Body Leakage Current
VGS=±10V, VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.4
0.6
1.0
V
RDS(ON)
Drain-Source On-State Resistance②
VGS=4.5V, ID=3A
--
48
60
mΩ
RDS(ON)
Drain-Source On-State Resistance②
VGS=3.3V, ID=2A
--
55
70
mΩ
RDS(ON)
Drain-Source On-State Resistance②
VGS=2.5V, ID=1A
--
66
80
mΩ
--
160
--
pF
--
30
--
pF
--
25
--
pF
--
4.0
--
nC
--
0.4
--
nC
--
1.2
--
nC
--
8
--
ns
--
30
--
ns
-
19
--
ns
--
28
--
ns
--
--
1.5
A
--
0.82
1.2
V
V(BR)DSS
IDSS
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VDS=10V, VGS=0V,
f=1MHz
VDS=10V
ID=3A,
VGS=5V
Switching Characteristics
t d(on)
Turn on Delay Time
tr
Turn on Rise Time
t d(off)
Turn Off Delay Time
tf
Turn Off Fall Time
VDD=10V,
ID=2A,
RG=3.3Ω,
VGS=4.5V
Source Drain Diode Characteristics
ISD
Source drain current(Body Diode)
VSD
Forward on voltage②
TA=25℃
Tj=25℃, ISD=1A,
VGS=0V
Notes:
① Pulse width limited by maximum allowable junction temperature
②Pulse test ; Pulse width300s, duty cycle2%.
Page 2 ,Total 5
SI2302S
MOSFET
N-Channel Enhancement-Mode MOSFET
ROHS
ID, Drain-Source Current (A)
VGS(TH), Gate -Source Voltage (V)
Typical Characteristics
VDS, Drain -Source Voltage (V)
Tj - Junction Temperature (°C)
Fig1. Typical Output Characteristics
Fig2. Normalized Threshold Voltage Vs. Temperature
ID, Drain-Source Current (A)
VDS, Drain -Source Voltage (mV)
Tc, Case Temperature (°C)
-ID - Drain Current (A)
VGS, Gate -Source Voltage (V)
Fig4. Drain -Source Voltage vs Gate -Source Voltage
ISD, Reverse Drain Current (A)
VGS, Gate -Source Voltage (V)
Fig3. Typical Transfer Characteristics
VSD, Source-Drain Voltage (V)
Fig5. Typical Source-Drain Diode Forward Voltage
Rev 8: Nov 2018
VDS, Drain -Source Voltage (V)
Fig6. Maximum Safe Operating Area
www.born-tw.com
Page 2 of 4
SI2302S
MOSFET
N-Channel Enhancement-Mode MOSFET
ROHS
C, Capacitance (pF)
VGS, Gate-Source Voltage (V)
Typical Characteristics
Qg, Total Gate Charge (nC)
Fig8. Typical Gate Charge Vs. Gate-Source Voltage
Thermal Resistance
ZqJA Normalized Transient
VDS, Drain-Source Voltage (V)
Fig7. Typical Capacitance Vs. Drain-Source Voltage
Pulse Width (s)
Fig9. Normalized Maximum Transient Thermal Impedance
SOT -23 PACKAGE OUTLINE Plastic surface mounted package
SOT-23
(UNIT):mm
Rev 8: Nov 2018
www.born-tw.com
Page 4 of 4
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