1N5817W

1A Surface Mount Schottky Barrier Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817W: 1N5818W: 1N5819W: Simplified outline SOD-123 SJ ME SL and symbol Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit VR 20 30 40 V Average Forward Rectified Current IF(AV) 1 A Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) IFSM 9 A Power Dissipation Ptot 450 mW Tj - 55 to + 125 O Tstg - 55 to + 125 O 1N5817W 1N5818W 1N5819W Reverse Voltage Operating Temperature Range Storage Temperature Range C C Characteristics at Ta = 25 C O Parameter Reverse Breakdown Voltage at IR = 1 mA Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.1 A at IF = 1 A at IF = 3 A Symbol 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W 1N5819W 1N5819W 1N5819W 1N5817W 1N5818W 1N5819W V (BR)R IR VF 1N5817W 1N5818W 1N5819W Total Capacitance at VR = 4 V, f = 1 MHz Ctot Min. Max. 20 30 40 - - 1 1 1 0.05 0.075 - 0.45 0.45 0.55 0.6 - 0.75 0.875 0.9 - 120 1 of 2 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Unit V mA V pF PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 2 of 2 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.