1N5819WS

1 A Surface Mount Schottky Barrier Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817WS: SJ 1N5818 / 5819WS: SL Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VR 20 30 40 V Average Forward Rectified Current IF(AV) 1 A Non-Repetitive Peak Forward Surge Current (t = 8.3 ms) IFSM 9 A Power Dissipation Ptot 450 mW Tj - 55 to + 125 O Tstg - 55 to + 125 O Reverse Voltage 1N5817WS 1N5818WS 1N5819WS Operating Temperature Range Storage Temperature Range Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA Forward Voltage at IF = 1 A at IF = 3 A Reverse Voltage Leakage Current at VR = 20 V at VR = 30 V at VR = 40 V Total Capacitance at VR = 4 V, f = 1 MHz Symbol 1N5817WS 1N5818WS 1N5819WS 1N5817WS 1N5818WS 1N5819WS V(BR)R VF 1N5817WS 1N5818WS 1N5819WS 1N5817WS 1N5818WS 1N5819WS IR Ctot Min. Max. 20 30 40 - - 0.45 0.55 0.6 - 0.75 0.875 0.9 - 1 1 1 - 120 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. C C Unit V V mA pF 1N5817WS~1N5819WS 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.