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MMBT2907A

MMBT2907A

  • 厂商:

    CBI(创基)

  • 封装:

    SOT-23

  • 描述:

    晶体管类型:- 集电极电流(Ic):600mA 集射极击穿电压(Vceo):60V 功率(Pd):350mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):1.6V@500mA,50mA 直...

  • 数据手册
  • 价格&库存
MMBT2907A 数据手册
MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit -VCBO 60 V -VCEO 40 60 V -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 350 mW Tj 150 O Tstg - 55 to + 150 O Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Junction Temperature Storage Temperature Range Page 1 of 4 MMBT2907 MMBT2907A 6/8/2011 C C Characteristics at Ta = 25 C O Parameter Symbol Min. Max. Unit MMBT2907 MMBT2907A hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 75 50 100 75 100 100 30 50 300 - - MMBT2907 MMBT2907A -ICBO -ICBO - 20 10 nA nA -V(BR)CBO 60 - V -V(BR)CEO -V(BR)CEO 40 60 - V V -V(BR)EBO 5 - V -VCE(sat) -VCE(sat) - 0.4 1.6 V V -VBE(sat) -VBE(sat) - 1.3 2.6 V V fT 200 - MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Cob - 8 pF Turn-on Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA ton - 45 ns Delay Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA td - 10 ns Rise Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA tr - 40 ns Turn-off Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA toff - 100 ns Storage Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA ts - 80 ns Fall Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA tf - 30 ns DC Current Gain at -IC = 0.1 mA, -VCE = 10 V at -IC = 1 mA, -VCE = 10 V at -IC = 10 mA, -VCE = 10 V at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA, -VCE = 10 V Collector Base Cutoff Current at -VCB = 50 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Base Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -IC = 50 mA , -VCE = 20 V, f = 100 MHz Page 2 of 4 6/8/2011 Page 3 of 4 6/8/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 4 of 4 SOT-23 6/8/2011
MMBT2907A 价格&库存

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