2SC1623

TRANSISTOR (NPN) FEATURE High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA SOT-23 High voltage: VCEO=50V 1．BASE 2．EMITTER 3．COLLECTOR MARKING：L6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA, Collector-emitter breakdown voltage V(BR)CEO IC=1mA, Emitter-base breakdown voltage V(BR)EBO IE=100µA, Collector cut-off current ICBO VCB=60V, Emitter cut-off current IEBO VEB=5V, IC=0 DC current gain hFE VCE=6V, IC=1mA IE=0 IB=0 IC=0 MIN TYP MAX UNIT 60 V 50 V 5 V IE=0 200 0.1 µA 0.1 µA 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT VCE=6V, IC=10mA 250 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. MHz Typical Characteristics 2SC1623 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.