RB551V-30

RB551V-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features PINNING • Small surface mounting type • Ultra low VF • High reliability 1 DESCRIPTION Cathode 2 Anode PIN 2 1 D Applications Top View Marking Code: " D " Simplified outline SOD-323 and symbol • High frequency rectification switching regulation Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Peak Reverse Voltage VRM 30 V DC Reverse Voltage VR 20 V Mean Rectifying Current IO 0.5 A IFSM 2 Tj 125 O Tstg - 40 to + 125 O Symbol Max. Unit Forward Voltage at IF = 100 mA at IF = 500 mA VF 0.36 0.47 V Reverse Current at VR = 20 V IR 100 µA Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range A C C Characteristics at Ta = 25 C O Parameter Note: ESD sensitive product handling required. Page 1 of 3 6/10/2011 Page 2 of 3 6/10/2011 PACKAGE OUTLINE Plastic surface mounted package; 2 leads Page 3 of 3 SOD-323 6/10/2011