MMDT3906DW

SOT-363 Plastic-Encapsulate Transistors ＭＭＤＴ３９０６ＤＷ SOT-363 DUAL TRANSISTOR (PNP+PNP) FEATURES ·Epitaxial planar die construction ·Ideal for low power amplification and switching MARKING:K3N MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO -5 V IC Emitter-Base Voltage Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.2 W RθJA 625 ℃/W TJ Thermal Resistance. Junction to Ambient Air Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V V Collector cut-off current ICEX VCE=-30V,VEB(OFF)=-3V -50 nA Base cut-off current IEBO VEB=-5V,IC=0 -50 nA hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 30 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency hFE(5) VCE=-1V,IC=-100mA VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V fT Collector output capacitance Cob Noise figure NF Delay time td Rise time tr Storage time tS Fall time tf Page 1 of 3 300 VCE=-20V,IC=-10mA,f=100MHz -0.65 250 MHz VCB=-5V,IE=0,f=1MHz VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1KΩ 4.5 pF 4 dB VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA 35 nS 35 nS VCC=-3V, IC=-10mA IB1=-IB2=- 1mA 225 nS 75 nS 2/28/2013 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Page 2 of 3 2/28/2013 Page 3 of 3 2/28/2013