MMBT5551

MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1．BASE 2．EMITTER 3．COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol Test conditions V(BR)CBO IC=100μA, V(BR)CEO* V(BR)EBO IE=0 MIN TYP MAX UNIT 180 V IC= 1mA, IB=0 160 V IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA hFE1* VCE=5V, IC=1mA 80 hFE2* VCE=5V, IC =10mA 100 hFE3* VCE=5V, IC=50mA 50 DC current gain Collector-emitter saturation voltage VCEsat* Base-emitter saturation voltage VBEsat* IC=10mA, IB=1mA 0.15 IC=50mA, IB=5mA 0.2 IC=10mA, IB= 1mA 1 IC=50mA, IB= 5mA 1 Transition frequency fT VCE=10V, IC=10mA, f=100MHz Collector output capacitance Cob Input capacitance Cib Noise figure NF Page 1 of 3 300 100 V V 300 MHz VCB=10V, IE=0, f=1MHz 6 pF VBE=0.5V, IC=0, f=1MHz 20 pF 8 dB VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1kΩ 5/31/2011 Typical Characteristics Page 2 of 3 MMBT5551 5/31/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/31/2011