S9012
TRANSISTOR (PNP)
FEATURES
SOT-23
Complementary to S9013
Excellent hFE linearity
1.BASE
2.EMITTER
3.COLLECTOR
MARKING: 2T1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
PC
Collector Power Dissipation
300
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC= -100µA,
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA,
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,
Collector cut-off current
ICBO
VCB=-40V, IE=0
-0.1
µA
Collector cut-off current
ICEO
VCE=-20V, IB=0
-0.1
µA
Emitter cut-off current
IEBO
VEB= -5V,
IC=0
-0.1
µA
DC current gain
hFE
VCE=-1V,
IC= -50mA
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB= -50mA
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCE=-6V,
Page 1 of 3
conditions
IE=0
IB=0
IC=0
MIN
TYP
MAX
UNIT
-40
V
-25
V
-5
V
120
200
IC= -20mA
f=30MHz
150
MHz
VCB=-10V, IE=0, f=1MHz
5
5/30/2011
pF
Typical Characteristics
Page 2 of 3
S9012
5/30/2011
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
Page 3 of 3
SOT-23
5/30/2011
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