S9015
TRANSISTOR (PNP)
FEATURES
SOT-23
Complementary to S9014
1.BASE
2.EMITTER
3.COLLECTOR
MARKING: M6
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.1
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -100µA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = -0.1mA, IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
µA
DC current gain
hFE
VCE=-5V, IC= -1mA
200
450
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -10mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-100mA, IB=-10mA
-1
V
Transition frequency
Page 1 of 3
fT
VCE=-5V,
f=30MHz
IC= -10mA
150
MHz
5/30/2011
Typical Characteristics
Page 2 of 3
S9015
5/30/2011
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
Page 3 of 3
SOT-23
5/30/2011
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