S9013

TRANSISTOR（NPN） S9013 FEATURES SOT-23 Complementary to S9012 Excellent hFE linearity 1．BASE 2．EMITTER 3．COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ VCBO Parameter ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA Collector cut-off current ICEO VCE=20V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA hFE(1) VCE=1V, IC= 50mA 120 hFE(2) VCE=1V, IC=500mA 40 DC current gain 200 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V Transition frequency Page 1 of 3 fT VCE=6V, f=30MHz IC= 20mA 150 MHz 5/30/2011 Typical Characteristics Page 2 of 3 S9013 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/30/2011