山东晶导微电子有限公司
RS3AF THRU RS3MF
Jingdao Microelectronics
Surface Mount Fast Recovery Rectifiers
Reverse Voltage - 50 to 1000 V
PINNING
Forward Current - 3 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Fast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: RS3A-RS3M
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
RS3AF
RS3BF
RS3DF
RS3GF
RS3JF
RS3KF
RS3MF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
at T c = 125 °C
I F(AV)
3
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
80
A
Maximum Forward Voltage at 3 A
VF
1.3
V
IR
5
100
μA
Cj
32
pF
Parameter
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Typical Junction Capacitance
at V R =4V, f=1MHz
Maximum Reverse Recovery Time
(1)
Typical Thermal Resistance (2)
Operating and Storage Temperature Range
t rr
250
150
500
ns
RθJA
RθJC
50
16
°C/W
T j , T stg
-55 ~ +150
°C
(1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.12
SMAF-F-RS3AF~RS3MF-3A1KV
Page 1 of 3
山东晶导微电子有限公司
RS3AF THRU RS3MF
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Average Forward Current (A)
Fig.1 Maximum Average Forward Current Rating
100
T J =125°C
10
1.0
T J =25°C
0.1
00
Case Temperature (°C)
T J =25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
40
60
80
100
120
140
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
Instaneous Forward Current (A)
Fig.3 Typical Instaneous Forward
Characteristics
10
20
percent of Rated Peak Reverse Voltage (%)
T J =25°C
100
10
T J=25°C
f = 1.0MHz
V sig = 50mV p-p
1
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
0.1
1.0
10
100
Reverse Voltage (V)
Peak Forward Surage Current (A)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
120
100
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2016.12
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
RS3AF THRU RS3MF
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMAF
∠ALL ROUND
C
A
∠ALL ROUND
HE
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.2
0.20
3.7
2.7
1.6
1.2
4.9
min
0.9
0.12
3.3
2.4
1.3
0.8
4.4
max
47
7.9
146
106
63
47
193
min
35
4.7
130
94
51
31
173
UNIT
mm
Marking
1.6
(63)
1.8
(71)
2.2
(86)
mm
Unit :
(mil)
2016.12
∠
7°
The recommended mounting pad size
1.6
(63)
g
pad
e
E
A
pad
D
E
A
V M
JD612058B0
Type number
Marking code
RS3AF
RS3A
RS3BF
RS3B
RS3DF
RS3D
RS3GF
RS3G
RS3JF
RS3J
RS3KF
RS3K
RS3MF
RS3M
Page 3 of 3
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