1SS357

Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM Power dissipation PD 200 mW Thermal Resistance Junction to Ambient RejA 500 C/W Operating Junction Temperature Range Tj -40 ~ +125 C Storage Temperature Range T -55~ +150 C 1 stg A Electrical Characteristics (Ta = 25 C) O Forward voltage VF 0.35 V lF=1mA Forward voltage VF 0.45 V lF=10mA Forward voltage VF 0.60 V IF=100mA Reverse current IR 5 卩A VR=40V Capacitance between terminals CT 25 pF VR=0V, f=1MHz 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.