Schottky Barrier Diode
Absolute Maximum Ratings (Ta = 25 C)
O
Parameter
Symbol
Limit
Unit
Peak reverse voltage
VRM
45
V
DC reverse voltage
VR
40
V
Mean rectifying current
IO
0.1
A
Non-repetitive Peak Forward Surge
Current@t=8.3ms
IFSM
Power dissipation
PD
200
mW
Thermal Resistance Junction to Ambient
RejA
500
C/W
Operating Junction Temperature Range
Tj
-40 ~ +125
C
Storage Temperature Range
T
-55~ +150
C
1
stg
A
Electrical Characteristics (Ta = 25 C)
O
Forward voltage
VF
0.35
V
lF=1mA
Forward voltage
VF
0.45
V
lF=10mA
Forward voltage
VF
0.60
V
IF=100mA
Reverse current
IR
5
卩A
VR=40V
Capacitance between terminals
CT
25
pF
VR=0V, f=1MHz
1 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
Typical Characteristics
2 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
3 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
很抱歉,暂时无法提供与“1SS357”相匹配的价格&库存,您可以联系我们找货
免费人工找货