SI2302
SOT-23 Plastic-Encapsulate MOSFETS
20V N-Channel Enhancement Mode MOSFET
V(BR)DSS
SOT-23
ID Max
RDS(on)Typ
28mΩ @ 4.5V
20V
3
3.0A
32mΩ @ 3.3V
1. GATE
2. SOURCE
1
3. DRAIN
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
2
Equivalent circuit
MARKING
D
A2sHB
G
S
PACKAGE SPECIFICATIONS
Package Reel Size
SOT-23
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Box Size
(mm)
QTY/Box
(pcs)
178
3000
203×203×195
45000
7'
Carton Size Q'TY/Carton
(mm)
(pcs)
438×438×220
180000
Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±10
Parameter
TA = 25 oC
Continuous Drain Current
o
T = 70 C
Maximum Power Dissipation
1) ,2)
TA = 25 C
T = 70oC
Storage Temperature Range
Thermal Resistance from Junction-to-Ambient (t≤5s)
A
12
1.2
PD
W
0.9
A
Maximum Junction Temperature
A
2.5
IDM
o
V
3.0
ID
A
Pulsed Drain Current 1)
Unit
TJ
150
o
Tstg
-50 to 150
o
100
RθJA
C
C
o
C/W
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
The above data are for reference only.
DN:T20220A0
http://www.microdiode.com
Rev:2020A0
Page :1
SI2302
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID=250µA
Gate-body leakage
IGSS
VGS=±10V, VDS=0V
Zero gate voltage drain current
IDSS
Gate-threshold voltage (note 1)
VGS(th)
Drain-source on-resistance (note 1)
RDS(on)
Forward transconductance (note 1)
gFS
20
V
±100
nA
VDS =20V, VGS =0V
1
µA
VDS =16V, VGS =0V
100
µA
0.6
1.0
V
VGS =4.5V, ID =3A
28
35
VGS =3.3V, ID =2A
32
40
VDS =5V, ID =3.6A
8
0.4
VDS =VGS, ID =250μA
mΩ
S
Dynamic characteristics (note 2)
Total Gate C harge
Qg
4.7
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.7
Input capacitance
Ciss
280
Output capacitance
Coss
Reverse transfer capacitance
Crss
42
td(on)
11
VDS =10V,ID=3A,VGS =5V
nC
0.6
VDS =10V,VGS =0V, f=1MHz
pF
46
Switching characteristics
Turn-on delay time (note 2)
Rise time (note 2)
Turn-off delay time (note 2)
Fall time (note 2)
tr
td(off)
VDD=10V, VGS=4.5V,
35
ID =4A,RG=3.3Ω
25
tf
ns
32
Drain-source body diode characteristics
Source drain current(Body Diode)
ISD
Body diode forward voltage (note 1)
VSD
0.74
ISD=2A, VGS = 0V
1.8
A
1.2
V
Notes :
1. Pulse Test : Pulse Width≤ 300µs, Duty Cycle≤ 2 %.
2.
These parameters have no way to verify.
http://www.microdiode.com
Rev:2020A0
Page :2
SI2302
ID, Drain-Source Current (A)
VGS(TH), Gate -Source Voltage (V)
Typical Characteristics
Fig1. Typical Output Characteristics
Fig2. Normalized Threshold Voltage Vs. Temperature
VDS, Drain -Source Voltage (mV)
Tj - Junction Temperature (°C)
ID, Drain-Source Current (A)
VDS, Drain -Source Voltage (V)
Fig3. Typical Transfer Characteristics
Fig4. Drain -Source Voltage vs Gate -Source Voltage
-ID - Drain Current (A)
VGS, Gate -Source Voltage (V)
ISD, Reverse Drain Current (A)
VGS, Gate -Source Voltage (V)
VSD, Source-Drain Voltage (V)
Fig5. Typical Source-Drain Diode Forward Voltage
http://www.microdiode.com
VDS, Drain -Source Voltage (V)
Fig6. Maximum Safe Operating Area
Rev:2020A0
Page :3
SI2302
C, Capacitance (pF)
VGS, Gate-Source Voltage (V)
Typical Characteristics
VDS, Drain-Source Voltage (V)
Fig8. Typical Gate Charge Vs. Gate-Source Voltage
Thermal Resistance
ZqJA Normalized Transient
Fig7. Typical Capacitance Vs. Drain-Source Voltage
Qg, Total Gate Charge (nC)
Pulse Width (s)
Fig9. Normalized Maximum Transient Thermal Impedance
Fig10. Switching Time Test Circuit and waveforms
The curve above is for reference only.
http://www.microdiode.com
Rev:2020A0
Page :4
SI2302
Outlitne Drawing
SOT-23 Package Outline Dimensions
1
e
Suggested Pad Layout
0.037
0.95
0.037
0.95
L
L1
E
E1
θ
Symbol
A
A1
b
c
D
E
E1
e
L
L1
θ
Dimensions In Millimeters
Min
Typ
Max
1.40
1.00
0.10
0.50
0.35
0.20
0.10
2.70
2.90
3.10
1.40
1.60
2.80
2.4
1.90
0.30
0.10
0.4
0°
10°
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
http://www.microdiode.com
Rev:2020A0
Page :5
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