2N7002K

2N7002K 60V N-Channel Enhancement Mode MOSFET SOT-23 V(BR)DSS 2.5Ω@10V 60V 3.0Ω@4.5V 3 ID RDS(on)MAX 1. Gate 2. Source 300mA 3. Drain 2 1 Features Application ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● ESD Protected up to 2KV(HBM) ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS Equivalent Circuit Marking D 702K G XXX XXX:Date Code S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 300 mA Pulsed Drain Current (Note 1) IDM 1.5 A PD 300 mW RθJA 416 ℃/W TJ,Tstg -50 ~150 Power Dissipation(Note 2) Thermal Resistance from Junction to Ambient(Note 2) Junction Temperature and Storage Temperature ℃ Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/5 V 1.1 2N7002K 60V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 -- -- V IDSS Drain-Source Leakage Current VDS=60V, VGS=0V -- -- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V -- -- ±10 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1 1.5 2.5 V RDS(ON) Drain-Source On-State Resistance(Note 3) VGS=10V, ID=300mA -- 1.9 2.5 Ω VGS=4.5V, ID=200mA -- 2.0 3.0 Ω Min Typ Max Unit -- 21 -- pF -- 9 -- pF -- 4 -- pF Dynamic Electrical Characteristics Symbol Parameter Condition Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=30V -- 1.22 2.4 nC Qgs Gate Source Charge VGS=10V -- 0.5 -- nC Qgd Gate Drain Charge -- 0.18 -- nC Min Typ Max Unit -- 7 -- ns -- 19 -- ns -- 20 -- ns -- 84 -- ns Min Typ Max Unit VDS=30V VGS=0V f=1MHz ID=0.3A Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=30V VGS =10V ID=300mA RG=6Ω Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) TA=25℃ -- -- 300 mA VSD Drain-Source Diode Forward Voltage IS=300mA, VGS=0V -- -- 1.2 V Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.Copper, double sided, in a still air environment with Ta=25℃. 3.Pulse test ; Pulse width≤300us, duty cycle≤2% 2/5 V 1.1 2N7002K 60V N-Channel Enhancement Mode MOSFET ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance 3/5 V 1.1 2N7002K 60V N-Channel Enhancement Mode MOSFET Figure7. Safe Operation Area Figure8. Switching wave 4/5 V 1.1 2N7002K 60V N-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol e Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 5/5 V 1.1