2N7002K

2N7002K SOT-23 Plastic-Encapsulate MOSFETS 60V N-Channel Enhancement Mode MOSFET V(BR)DSS RDS(on)Typ ID MAX 3 0.9Ω@10V 60 V SO T -23 500mA 1.1Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch Rugged and reliable z z z 1 2 APPLICATION Load Switch for Portable Devices z DC/DC Converter z High saturation current capability HMB ESD protected (2000V) Equivalent circuit MARKING D 702K G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 203×203×195 45000 438×438×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 0.5 A Power Dissipation PD 0.3 W RθJA 400 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient DN:T19B07A0 http://www.microdiode.com ℃ The above data are for reference only. Rev:2019A0 Page :1 2N7002K MOSFET ELECTRICAL CHARACTERISTICS Ta=25°C unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 -- -- V Zero Gate Voltage Drain Current(TA=25℃) VDS=60V, VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(TA=125℃) VDS=50V, VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V -- -- ±10 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.6 2.5 V RDS(ON) Drain-Source On-State Resistance② VGS=10V, ID=0.5A -- 0.9 2 Ω RDS(ON) Drain-Source On-State Resistance② VGS=4.5V, ID=0.3A -- 1.4 3 Ω -- 23.8 -- pF -- 3.9 -- pF -- 1.5 -- pF -- 0.93 -- nC -- 0.18 -- nC -- 0.31 -- nC -- 6 -- ns -- 3.5 -- ns - 20 -- ns -- 5.9 -- ns -- -- 0.2 A -- 0.78 1.2 V IDSS Dynamic Electrical Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Q gs Gate Source Charge Q gd Gate Drain Charge VDS=30V, VGS=0V, f=1MHz VDS=30V ID=0.5A, VGS=10V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time t d(off) Turn Off Delay Time tf Turn Off Fall Time VDD=30V, ID=0.3A, RG=3.3Ω, VGS=10V Source Drain Diode Characteristics ISD Source drain current(Body Diode) VSD Forward on voltage② TA=25℃ Tj=25℃, ISD=0.5A, VGS=0V Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. http://www.microdiode.com Rev:2019A0 Page :2 2N7002K ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature VDS, Drain -Source Voltage (mV) Tj - Junction Temperature (°C) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) VGS, Gate -Source Voltage (V) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area The curve above is for reference only. http://www.microdiode.com Rev:2019A0 Page :3 2N7002K C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. http://www.microdiode.com Rev:2019A0 Page :4 2N7002K Outlitne Drawing SOT-23 Package Outline Dimensions L L1 E E1 θ 1 e Symbol A A1 b c D E E1 E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.35 0.50 0.10 0.20 2.70 2.90 3.10 1.40 1.60 2.4 2.80 1.90 0.10 0.30 0.4 0° 10° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2019A0 Page :5