GD25Q80ESIG

Uniform Sector Dual and Quad Serial Flash GD25Q80E DATASHEET 1 GD25Q80E Uniform Sector Dual and Quad Serial Flash GD25Q80E Contents 1 FEATURES .........................................................................................................................................................4 2 GENERAL DESCRIPTIONS..............................................................................................................................5 3 MEMORY ORGANIZATION ...............................................................................................................................7 4 DEVICE OPERATIONS......................................................................................................................................8 4.1 SPI MODE .............................................................................................................................................................. 8 4.2 HOLD FUNCTION ..................................................................................................................................................... 8 5 DATA PROTECTION ..........................................................................................................................................9 6 STATUS REGISTER ........................................................................................................................................ 11 7 COMMAND DESCRIPTIONS .......................................................................................................................... 14 7.1 WRITE ENABLE (WREN) (06H) ................................................................................................................................ 17 7.2 WRITE DISABLE (WRDI) (04H) ................................................................................................................................ 17 7.3 READ STATUS REGISTER (RDSR) (05H OR 35H) .......................................................................................................... 17 7.4 WRITE STATUS REGISTER (WRSR) (01H) ................................................................................................................... 18 7.5 WRITE ENABLE FOR VOLATILE STATUS REGISTER (50H) ................................................................................................. 18 7.6 READ DATA BYTES (READ) (03H)............................................................................................................................. 19 7.7 READ DATA BYTES AT HIGHER SPEED (FAST READ) (0BH) .............................................................................................. 19 7.8 DUAL OUTPUT FAST READ (3BH) .............................................................................................................................. 20 7.9 QUAD OUTPUT FAST READ (6BH) ............................................................................................................................. 21 7.10 DUAL I/O FAST READ (BBH) .................................................................................................................................... 21 7.11 QUAD I/O FAST READ (EBH) ................................................................................................................................... 22 7.12 SET BURST WITH WRAP (77H) ................................................................................................................................. 24 7.13 PAGE PROGRAM (PP) (02H) .................................................................................................................................... 24 7.14 QUAD PAGE PROGRAM (32H) .................................................................................................................................. 25 7.15 SECTOR ERASE (SE) (20H) ....................................................................................................................................... 26 7.16 32KB BLOCK ERASE (BE) (52H) ............................................................................................................................... 26 7.17 64KB BLOCK ERASE (BE) (D8H)............................................................................................................................... 27 7.18 CHIP ERASE (CE) (60/C7H) ..................................................................................................................................... 27 7.19 READ MANUFACTURE ID/ DEVICE ID (REMS) (90H) ................................................................................................... 28 7.20 READ IDENTIFICATION (RDID) (9FH) ......................................................................................................................... 28 7.21 READ UNIQUE ID (4BH) .......................................................................................................................................... 29 7.22 ERASE SECURITY REGISTERS (44H) ............................................................................................................................ 30 7.23 PROGRAM SECURITY REGISTERS (42H) ....................................................................................................................... 30 7.24 READ SECURITY REGISTERS (48H) ............................................................................................................................. 31 7.25 ENABLE RESET (66H) AND RESET (99H) ..................................................................................................................... 32 7.26 PROGRAM/ERASE SUSPEND (PES) (75H) ................................................................................................................... 32 7.27 PROGRAM/ERASE RESUME (PER) (7AH) ................................................................................................................... 33 2 Uniform Sector Dual and Quad Serial Flash 7.28 DEEP POWER-DOWN (DP) (B9H) ............................................................................................................................. 33 7.29 RELEASE FROM DEEP POWER-DOWN AND READ DEVICE ID (RDI) (ABH) ......................................................................... 34 7.30 READ SERIAL FLASH DISCOVERABLE PARAMETER (5AH)................................................................................................. 34 ELECTRICAL CHARACTERISTICS .............................................................................................................. 36 8 8.1 POWER-ON TIMING ................................................................................................................................................ 36 8.2 INITIAL DELIVERY STATE ........................................................................................................................................... 36 8.3 ABSOLUTE MAXIMUM RATINGS ................................................................................................................................ 36 8.4 CAPACITANCE MEASUREMENT CONDITIONS................................................................................................................. 37 8.5 DC CHARACTERISTICS .............................................................................................................................................. 38 8.6 AC CHARACTERISTICS .............................................................................................................................................. 41 ORDERING INFORMATION............................................................................................................................ 48 9 9.1 10 11 GD25Q80E VALID PART NUMBERS ............................................................................................................................................ 49 PACKAGE INFORMATION ......................................................................................................................... 50 10.1 PACKAGE SOP8 150MIL ........................................................................................................................................ 50 10.2 PACKAGE SOP8 208MIL ........................................................................................................................................ 51 10.3 PACKAGE USON8 (3X2MM, 0.45MM THICKNESS) ....................................................................................................... 52 10.4 PACKAGE USON8 (3X4MM) .................................................................................................................................... 53 10.5 PACKAGE WSON8 (6X5MM) ................................................................................................................................... 54 REVISION HISTORY .................................................................................................................................... 55 3 Uniform Sector Dual and Quad Serial Flash GD25Q80E 1 FEATURES ◆ 8M-bit Serial Flash ◆ Fast Program/Erase Speed - 1024K-Byte - Page Program time: 0.4ms typical - 256 Bytes per programmable page - Sector Erase time: 45ms typical - Block Erase time: 0.15s/0.25s typical ◆ Standard, Dual, Quad SPI - Chip Erase time: 3s typical - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# ◆ Flexible Architecture - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 - Uniform Sector of 4K-Byte - Uniform Block of 32/64K-Byte ◆ High Speed Clock Frequency ◆ Low Power Consumption - 133MHz for fast read with 30PF load - Dual I/O Data transfer up to 266Mbits/s - 11μA typical standby current - Quad I/O Data transfer up to 532Mbits/s - 1μA typical deep power down current ◆ Software/Hardware Write Protection ◆ Advanced Security Features - Write protect all/portion of memory via software - 128-bit Unique ID for each device - Enable/Disable protection with WP# Pin - Serial Flash Discoverable parameters (SFDP) register - Top/Bottom Block protection - 2x1024-Byte Security Registers With OTP Locks ◆ Endurance and Data Retention ◆ Single Power Supply Voltage - Minimum 100,000 Program/Erase Cycles - Full voltage range: 2.7-3.6V - 20-year data retention typical ◆ Package Information ◆ Allows XiP (eXecute in Place) Operation - SOP8 150mil - High speed Read reduce overall XiP instruction fetch time - SOP8 208mil - Continuous Read with Wrap further reduce data latency to - USON8 (3x2mm, 0.45mm thickness) fill up SoC cache - USON8 (3x4mm) - WSON8 (6x5mm) 4 Uniform Sector Dual and Quad Serial Flash 2 GD25Q80E GENERAL DESCRIPTIONS The GD25Q80E (8M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s. CONNECTION DIAGRAM CS# 1 8 VCC CS# 1 8 VCC SO (IO1) 2 7 HOLD# (IO3) SO (IO1) 2 7 HOLD# (IO3) 3 6 SCLK 4 5 SI (IO0) Top View WP# (IO2) 3 6 SCLK WP# (IO2) VSS 4 5 SI (IO0) VSS Top View 8 - LEAD USON/WSON 8 - LEAD SOP PIN DESCRIPTION Table 1. Pin Description for SOP8/USON8/WSON8 Package Pin No. Pin Name I/O Description 1 CS# I 2 SO (IO1) I/O Data Output (Data Input Output 1) 3 WP# (IO2) I/O Write Protect Input (Data Input Output 2) 4 VSS 5 SI (IO0) I/O 6 SCLK I 7 HOLD# (IO3) I/O 8 VCC Chip Select Input Ground Data Input (Data Input Output 0) Serial Clock Input Hold Input (Data Input Output 3) Power Supply Note: CS# must be driven high if chip is not selected. Please don’t leave CS# floating any time after power is on. 5 Uniform Sector Dual and Quad Serial Flash GD25Q80E BLOCK DIAGRAM Write Control Logic Status Register HOLD#(IO3) SCLK CS# SPI Command & Control Logic High Voltage Generators Page Address Latch/Counter Write Protect Logic and Row Decode WP#(IO2) Flash Memory Column Decode And 256-Byte Page Buffer SI(IO0) SO(IO1) Byte Address Latch/Counter 6 Uniform Sector Dual and Quad Serial Flash 3 GD25Q80E MEMORY ORGANIZATION GD25Q80E Each device has Each block has Each sector has Each page has 1M 64/32K 4K 256 Bytes 4K 256/128 16 - pages 256 16/8 - - sectors 16/32 - - - blocks UNIFORM BLOCK SECTOR ARCHITECTURE GD25Q80E 64K Bytes Block Sector Architecture Block 15 14 …… …… 2 1 0 Sector Address range 255 0FF000H 0FFFFFH …… …… …… 240 0F0000H 0F0FFFH 239 0EF000H 0EFFFFH …… …… …… 224 0E0000H 0E0FFFH …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… 47 02F000H 02FFFFH …… …… …… 32 020000H 020FFFH 31 01F000H 01FFFFH …… …… …… 16 010000H 010FFFH 15 00F000H 00FFFFH …… …… …… 0 000000H 000FFFH 7 Uniform Sector Dual and Quad Serial Flash GD25Q80E 4 DEVICE OPERATIONS 4.1 SPI Mode Standard SPI The GD25Q80E features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK. Dual SPI The GD25Q80E supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast Read” (3BH and BBH) commands. These commands allow data to be transferred to or from the device at twice the rate of the standard SPI. When using the Dual SPI commands, the SI and SO pins become bidirectional I/O pins: IO0 and IO1. Quad SPI The GD25Q80E supports Quad SPI operation when using the “Quad Output Fast Read”, “Quad I/O Fast Read” (6BH, EBH) commands. These commands allow data to be transferred to or from the device at four times the rate of the standard SPI. When using the Quad SPI commands, the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and the WP# and HOLD# pins become bidirectional I/O pins: IO2 and IO3. The Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status Register set to 1. 4.2 HOLD Function The HOLD function is available when QE=0. If QE=1, The HOLD function is disabled, and the HOLD# pin acts as dedicated data I/O pin. The HOLD# signal goes low to stop any serial communications with the device, except the operation of write status register, programming, or erasing in progress. The operation of HOLD needs CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being low. If SCLK is not low, HOLD operation will not start until SCLK is low. The HOLD condition ends on rising edge of HOLD# signal with SCLK being low. If SCLK is not low, HOLD operation will not end until SCLK is low. The SO is high impedance, both SI and SCLK don’t care during the HOLD operation. If CS# is driven high during HOLD operation, it will reset the internal logic of the device. To re-start communication with the chip, the HOLD# must be at high and then CS# must be at low. Figure 1 HOLD Condition CS# SCLK HOLD# HOLD HOLD 8 Uniform Sector Dual and Quad Serial Flash 5 GD25Q80E DATA PROTECTION The GD25Q80E provide the following data protection methods: Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will ◆ return to reset by the following situation: -Power-Up / Software Reset (66H+99H) -Write Disable (WRDI) -Write Status Register (WRSR) -Page Program (PP) -Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE) Software Protection Mode: The Block Protect bits (BP4-BP0) define the section of the memory array that can be ◆ read but not changed. Hardware Protection Mode: WP# goes low to protect the Block Protect bits (BP4-BP0) and the SRP bits (SRP1 and ◆ SRP0). Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep ◆ Power-Down Mode command and Software Reset (66H+99H). Write Inhibit Voltage (VWI): Device would reset automatically when VCC is below a certain threshold VWI. ◆ Table 2. GD25Q80E Protected area size (CMP=0) Status Register Content Memory Content BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X X 0 0 0 NONE NONE NONE NONE 0 0 0 0 1 15 0F0000H-0FFFFFH 64KB Upper 1/16 0 0 0 1 0 14to 15 0E0000H-0FFFFFH 128KB Upper 1/8 0 0 0 1 1 12to 15 0C0000H-0FFFFFH 256KB Upper 1/4 0 0 1 0 0 8 to 15 080000H-0FFFFFH 512KB Upper 1/2 0 1 0 0 1 0 000000H-00FFFFH 64KB Lower 1/16 0 1 0 1 0 0 to 1 000000H-01FFFFH 128KB Lower 1/8 0 1 0 1 1 0 to 3 000000H-03FFFFH 256KB Lower 1/4 0 1 1 0 0 0 to 7 000000H-07FFFFH 512KB Lower 1/2 0 X 1 0 1 0 to 15 000000H-0FFFFFH 1MB ALL X X 1 1 X 0 to 15 000000H-0FFFFFH 1MB ALL 1 0 0 0 1 15 0FF000H-0FFFFFH 4KB Top Block 1 0 0 1 0 15 0FE000H-0FFFFFH 8KB Top Block 1 0 0 1 1 15 0FC000H-0FFFFFH 16KB Top Block 1 0 1 0 X 15 0F8000H-0FFFFFH 32KB Top Block 1 1 0 0 1 0 000000H-000FFFH 4KB Bottom Block 1 1 0 1 0 0 000000H-001FFFH 8KB Bottom Block 1 1 0 1 1 0 000000H-003FFFH 16KB Bottom Block 1 1 1 0 X 0 000000H-007FFFH 32KB Bottom Block 9 Uniform Sector Dual and Quad Serial Flash GD25Q80E Table 3. GD25Q80E Protected area size (CMP=1) Status Register Content Memory Content BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X X 0 0 0 0 to 15 000000H-0FFFFFH 1M ALL 0 0 0 0 1 0 to 14 000000H-0EFFFFH 960KB Lower 15/16 0 0 0 1 0 0 to 13 000000H-0DFFFFH 896KB Lower 17/8 0 0 0 1 1 0 to 11 000000H-0BFFFFH 768KB Lower 3/4 0 0 1 0 0 0 to 7 000000H-07FFFFH 512KB Lower 1/2 0 1 0 0 1 1 to 15 010000H-0FFFFFH 960KB Upper 15/16 0 1 0 1 0 2 to 15 020000H-0FFFFFH 896KB Upper 7/8 0 1 0 1 1 4 to 15 040000H-0FFFFFH 768KB Upper 3/4 0 1 1 0 0 8 to 15 080000H-0FFFFFH 512KB Upper 1/2 0 X 1 0 1 NONE NONE NONE NONE X X 1 1 X NONE NONE NONE NONE 1 0 0 0 1 0 to 15 000000H-0FEFFFH 1020KB L - 255/256 1 0 0 1 0 0 to 15 000000H-0FDFFFH 1016KB L - 127/128 1 0 0 1 1 0 to 15 000000H-0FBFFFH 1008KB L - 63/64 1 0 1 0 X 0 to 15 000000H-0F7FFFH 992KB L – 31/32 1 1 0 0 1 0 to 15 001000H-0FFFFFH 1020KB U - 255/156 1 1 0 1 0 0 to 15 002000H-0FFFFFH 1016KB U - 127/128 1 1 0 1 1 0 to 15 004000H-0FFFFFH 1008KB U - 63/64 1 1 1 0 X 0 to 15 008000H-0FFFFFH 992KB U – 31/32 10 Uniform Sector Dual and Quad Serial Flash 6 GD25Q80E STATUS REGISTER Table 4. Status Register-SR No.1 No. Name Description Note S7 SRP0 Status Register Protection Bit Non-volatile writable S6 BP4 Block Protect Bit Non-volatile writable S5 BP3 Block Protect Bit Non-volatile writable S4 BP2 Block Protect Bit Non-volatile writable S3 BP1 Block Protect Bit Non-volatile writable S2 BP0 Block Protect Bit Non-volatile writable S1 WEL Write Enable Latch Volatile, read only S0 WIP Erase/Write In Progress Volatile, read only Table 5. Status Register-SR No.2 No. Name Description Note S15 SUS Suspend Bit Volatile, read only S14 CMP Complement Protect Bit Non-volatile writable S13 Reserved Reserved Reserved S12 DC Dummy Configuration Bit Non-volatile writable S11 LB1 Security Register Lock Bit Non-volatile writable (OTP) S10 LB0 Security Register Lock Bit Non-volatile writable (OTP) S9 QE Quad Enable Bit Non-volatile writable S8 SRP1 Status Register Protection Bit Non-volatile writable The status and control bits of the Status Register are as follows: WIP bit The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress. When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0, means the device is not in program/erase/write status register progress. WEL bit The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase command is accepted. BP4, BP3, BP2, BP1, BP0 bits The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits are non-volatile. They define the size of the area to be software protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in Table 2&3) becomes protected against Page Program (PP), Sector Erase (SE) and Block Erase (BE) commands. The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits can be written provided that the Hardware Protected mode has not been set. The Chip 11 Uniform Sector Dual and Quad Serial Flash GD25Q80E Erase (CE) command is executed, if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block Protect (BP2, BP1, and BP0) bits are 1 and CMP=1. SRP1, SRP0 bits The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time programmable protection. SRP1 SRP0 #WP Status Register 0 0 X Software Protected 0 1 0 Hardware Protected 0 1 1 Hardware Unprotected 1 0 X 1 1 X Power Supply LockDown(1)(2) One Time Program(2) Description The Status Register can be written to after a Write Enable command, WEL=1.(Default) WP#=0, the Status Register locked and cannot be written to. WP#=1, the Status Register is unlocked and can be written to after a Write Enable command, WEL=1. Status Register is protected and cannot be written to again until the next Power-Down, Power-Up cycle. Status Register is permanently protected and cannot be written to. NOTE: 1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state. 2. This feature is available on special order. Please contact GigaDevice for details. QE bit The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3 pins are enabled. (It is best to set the QE bit to 0 to avoid short issues if the WP# or HOLD# pin is tied directly to the power supply or ground.) LB1, LB0 bits The LB1 and LB0 bits are non-volatile One Time Program (OTP) bits in Status Register (S11 and S10) that provide the write protect control and status to the Security Registers. The default state of LB1 and LB0 bits are 0, the security registers are unlocked. The LB1 and LB0 bits can be set to 1 individually using the Write Register instruction. The LB1 and LB0 bits are One Time Programmable, once they are set to 1, the Security Registers will become read-only permanently. DC bit The Dummy Configuration (DC) bit is non-volatile, which selects the number of dummy cycles between the end of address and the start of read data output. Dummy cycles provide additional latency that is needed to complete the initial read access of the flash array before data can be returned to the host system. Some read commands require additional dummy cycles as the SCLK frequency increases. The following dummy cycle tables provide different dummy cycle settings that are configured. 12 Uniform Sector Dual and Quad Serial Flash Command BBH GD25Q80E DC bit Numbers of Dummy Cycles Freq.(MHz) 0 (default) 4 104 1 8 133R 0 (default) 6 104 1 10 133R EBH Note: 1. “R” means VCC range=3.0V~3.6V. Reserved bit It is recommended to set the value of the reserved bit as “0”. CMP bit The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction with the BP4-BP0 bits to provide more flexibility for the array protection. Please see the Status registers Memory Protection table for details. The default setting is CMP=0. SUS bit The SUS bit is a read only bit in the status register (S15) that is set to 1 after executing an Erase/Program Suspend (75H) command. The SUS bit is cleared to 0 by Erase/Program Resume (7AH) command, software reset (66H+99H) command, as well as a power-down, power-up cycle. 13 Uniform Sector Dual and Quad Serial Flash 7 GD25Q80E COMMAND DESCRIPTIONS All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, with most significant bit first on SI, and each bit is latched on the rising edges of SCLK. Every command sequence starts with a one-byte command code. Depending on the command, this might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the command sequence has been completed. For the command of Read, Fast Read, Read Status Register or Release from Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. All read instruction can be completed after any bit of the data-out sequence is being shifted out, and then CS# must be driven high to return to deselected status. For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the command is rejected, and is not executed. That is CS# must be driven high when the number of clock pulses after CS# being driven low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not be reset. Table 6. Commands Command Name Byte 1 Byte 2 Byte 3 Write Enable 06H Write Disable 04H Read Status Register-1 05H (S7-S0) (cont.) Read Status Register-2 35H (S15-S8) (cont.) 01H S7-S0 S15-S8 Write Status Register1&2 Volatile SR write Enable Byte 4 Byte 5 Byte 6 Byte 7 03H A23-A16 A15-A8 A7-A0 (D7-D0) (cont.) Fast Read 0BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (cont.) Dual Output Fast Read 3BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(1) (cont.) 6BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(2) (cont.) Read Byte 9 50H Read Data Quad Output Fast Byte 8 Dual I/O Fast Read BBH A23-A16(3) A15-A8(3) A7-A0(3) M7-M0(4) (D7-D0)(1) (cont.) Quad I/O Fast Read EBH A23-A16(5) A15-A8(5) A7-A0(5) M7-M0(6) dummy (D7-D0)(2) (cont.) Set Burst with Wrap 77H dummy(7) dummy(7) Page Program 02H A23-A16 A15-A8 dummy dummy(7) W7-W0(7) A7-A0 D7-D0 Next Byte D7-D0(8) Next Byte Quad Page Program 32H A23-A16 A15-A8 A7-A0 Sector Erase 20H A23-A16 A15-A8 A7-A0 Block Erase (32K) 52H A23-A16 A15-A8 A7-A0 Block Erase (64K) D8H A23-A16 A15-A8 A7-A0 14 Uniform Sector Dual and Quad Serial Flash Chip Erase Read Manufacturer/ Device ID GD25Q80E C7/60H 90H 00H (MID7- 00H 00H MID0) (ID7-ID0) Read Identification 9FH Read Unique ID 4BH 00H 00H 00H 44H A23-A16 A15-A8 A7-A0 42H A23-A16 A15-A8 A7-A0 D7-D0 Next Byte 48H A23-A16 A15-A8 A7-A0 dummy (D7-D0) ABH dummy dummy dummy (ID7-ID0) (cont.) 5AH A23-A16 A15-A8 A7-A0 dummy (D7-D0) Erase Security Registers(9) Program Security Registers(9) Read Security Registers(9) Enable Reset 66H Reset 99H Program/Erase Suspend Program/Erase Resume Deep Power-Down Release From Deep Power-Down MID0) (ID15-ID8) (ID7-ID0) (MID7- (cont.) (cont.) dummy (UID7UID0) (cont.) (cont.) 75H 7AH B9H ABH Release From Deep Power-Down and Read Device ID Read Serial Flash Discoverable Parameter Note: 1. Dual Output data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) 2. Quad Output Data IO0 = (D4, D0, …) IO1 = (D5, D1, …) IO2 = (D6, D2, …) IO3 = (D7, D3, …) 3. Dual Input Address IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0 IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1 4. Dual Input Mode bit IO0 = M6, M4, M2, M0 15 (cont.) Uniform Sector Dual and Quad Serial Flash GD25Q80E IO1 = M7, M5, M3, M1 5. Quad Input Address IO0 = A20, A16, A12, A8, A4, A0 IO1 = A21, A17, A13, A9, A5, A1 IO2 = A22, A18, A14, A10, A6, A2 IO3 = A23, A19, A15, A11, A7, A3 6. Quad Input Mode bit IO0 = M4, M0 IO1 = M5, M1 IO2 = M6, M2 IO3 = M7, M3 7. Dummy bits and Wrap Bits IO0 = (x, x, x, x, x, x, W4, x) IO1 = (x, x, x, x, x, x, W5, x) IO2 = (x, x, x, x, x, x, W6, x) IO3 = (x, x, x, x, x, x, x, x) 8. Quad Output Data IO0 = D4, D0, … IO1 = D5, D1, … IO2 = D6, D2, … IO3 = D7, D3, … 9. Security Registers Address Security Register0: A23-A16=00H, A15-A12=0H, A11-A10 = 00b, A9-A0= Byte Address; Security Register1: A23-A16=00H, A15-A12=1H, A11-A10 = 00b, A9-A0= Byte Address; TABLE OF ID DEFINITIONS GD25Q80E Operation Code MID7-MID0 ID15-ID8 ID7-ID0 9FH C8 40 14 90H C8 13 ABH 13 16 Uniform Sector Dual and Quad Serial Flash 7.1 GD25Q80E Write Enable (WREN) (06H) The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Quad Page Program (QPP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register (WRSR) and Erase/Program Security Registers command. The Write Enable (WREN) command sequence: CS# goes low  sending the Write Enable command  CS# goes high. Figure 2. Write Enable Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 06H High-Z SO 7.2 Write Disable (WRDI) (04H) The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit may be set to 0 by issuing the Write Disable (WRDI) command to disable Page Program (PP), Quad Page Program (QPP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register (WRSR), that require WEL be set to 1 for execution. The WRDI command can be used by the user to protect memory areas against inadvertent writes that can possibly corrupt the contents of the memory. The WRDI command is ignored during an embedded operation while WIP bit =1. The WEL bit is reset by following condition: Write Disable command (WRDI), Power-up, and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase commands. The Write Disable command sequence: CS# goes low Sending the Write Disable command CS# goes high. Figure 3. Write Disable Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI SO 04H High-Z 7.3 Read Status Register (RDSR) (05H or 35H) The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write in Progress (WIP) bit before sending a new command to the device. It is also possible to read the Status Register continuously. For command code “05H”, the SO will output Status Register bits S7~S0. The command code “35H”, the SO will output Status Register bits S15~S8. 17 Uniform Sector Dual and Quad Serial Flash GD25Q80E Figure 4. Read Status Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Command SI 05H or 35H High-Z SO 7 S7~S0 or S15~S8 out 6 5 4 3 2 1 0 MSB 7 S7~S0 or S15~S8 out 6 5 4 3 2 1 0 7 MSB 7.4 Write Status Register (WRSR) (01H) The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register (WRSR) command has no effect on S15, S1 and S0 of the Status Register. CS# must be driven high after the eighth or sixteenth bit of the data byte has been latched in. Otherwise, the Write Status Register (WRSR) command is not executed. If CS# is driven high after eighth bit of the data byte, the CMP and QE bits will be cleared to 0. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset. The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is not executed once the Hardware Protected Mode is entered. Figure 5. Write Status Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 7 6 SCLK Command SI SO 7.5 01H High-Z Status Register in 5 MSB 4 3 2 1 Status Register in 0 15 14 13 12 11 10 9 8 MSB Write Enable for Volatile Status Register (50H) The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write Enable for Volatile Status Register command must be issued prior to a Write Status Register command and any other commands can’t be inserted between them. Otherwise, Write Enable for Volatile Status Register will be cleared. The Write Enable for Volatile Status Register command will not set 18 Uniform Sector Dual and Quad Serial Flash GD25Q80E the Write Enable Latch bit, it is only valid for the Write Status Register command to change the volatile Status Register bit values. Figure 6. Write Enable for Volatile Status Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 50H High-Z SO 7.6 Read Data Bytes (READ) (03H) The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency fR, on the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 7. Read Data Bytes Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Command SI SO 03H High-Z 24-bit address 23 22 21 3 2 1 0 MSB MSB 7 6 5 Data Out1 4 3 2 1 Data Out2 0 7.7 Read Data Bytes at Higher Speed (Fast Read) (0BH) The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte address (A23-A0) and a dummy byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency f C, on the falling edge of SCLK. The first byte address can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. 19 Uniform Sector Dual and Quad Serial Flash GD25Q80E Figure 8. Read Data Bytes at Higher Speed Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 24-bit address 0BH 23 22 21 3 2 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI 7 6 5 4 3 2 1 0 7.8 Data Out1 5 4 3 2 7 6 MSB SO 1 0 Data Out2 7 6 5 MSB Dual Output Fast Read (3BH) The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 9. Dual Output Fast Read Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24-bit address 3BH 23 22 21 3 2 1 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Clocks SI SO 6 0 6 Data Out1 Data Out2 7 5 3 1 7 5 3 1 MSB MSB 7 20 4 2 0 6 4 2 0 Uniform Sector Dual and Quad Serial Flash 7.9 GD25Q80E Quad Output Fast Read (6BH) The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad Output Fast Read command. Figure 10. Quad Output Fast Read Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command IO0 24-bit address 6BH 23 22 21 IO1 High-Z IO2 High-Z IO3 High-Z CS# 3 2 1 0 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Clocks IO0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 Byte1 Byte2 Byte3 Byte4 7.10 Dual I/O Fast Read (BBH) The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input the 3byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, and each bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Dual I/O Fast Read with “Continuous Read Mode” The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) = AXH, then the next Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. If the “Continuous Read Mode” bits (M7-0) ≠ AXH, the next command requires the command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. 21 Uniform Sector Dual and Quad Serial Flash GD25Q80E Figure 11. Dual I/O Fast Read Sequence Diagram ((M7-0) ≠ AXH) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 6 4 2 0 6 5 3 1 7 SCLK Command IO0 BBH IO1 7 A23-16 CS# 4 2 0 6 5 3 1 7 A15-8 4 2 0 6 5 3 1 7 A7-0 4 2 0 5 3 1 M7-0 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 SCLK IO0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 IO1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte1 Byte2 Byte3 Byte4 Figure 12. Dual I/O Fast Read Sequence Diagram ((M7-0) = AXH) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IO0 6 4 2 0 6 4 2 0 6 4 2 0 6 IO1 7 5 3 1 7 5 3 1 7 5 3 1 7 SCLK A23-16 CS# A15-8 A7-0 4 2 0 5 3 1 M7-0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCLK IO0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 IO1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte1 Byte2 Byte3 Byte4 7.11 Quad I/O Fast Read (EBH) The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO3, IO4, and each bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Fast read command. 22 Uniform Sector Dual and Quad Serial Flash GD25Q80E Quad I/O Fast Read with “Continuous Read Mode” The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) = AXH, then the next Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. If the “Continuous Read Mode” bits (M7-0) ≠ AXH, the next command requires the command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. Figure 13. Quad I/O Fast Read Sequence Diagram ((M7-0) ≠ AXH) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 4 0 4 0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 3 7 SCLK Command IO0 EBH A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Figure 14. Quad I/O Fast Read Sequence Diagram ((M7-0) = AXH) CS# 0 1 2 3 4 5 6 7 IO0 4 0 4 0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 3 7 8 9 10 11 12 13 14 15 SCLK A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode The Quad I/O Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with Wrap” (77H) commands prior to EBH. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap Around” feature for the following EBH commands. When “Wrap Around” is enabled, the data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page. The output data starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary automatically until CS# is pulled high to terminate the command. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap” 23 Uniform Sector Dual and Quad Serial Flash GD25Q80E command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-W5 is used to specify the length of the wrap around section within a page. 7.12 Set Burst with Wrap (77H) The Set Burst with Wrap command is used in conjunction with “Quad I/O Fast Read” command to access a fixed length of 8/16/32/64-byte section within a 256-byte page, in standard SPI mode. The Set Burst with Wrap command sequence: CS# goes low  Send Set Burst with Wrap command  Send 24 dummy bits  Send 8 bits “Wrap bits”  CS# goes high. W6,W5 W4=0 W4=1 (default) Wrap Around Wrap Length Wrap Around Wrap Length 0, 0 Yes 8-byte No N/A 0, 1 Yes 16-byte No N/A 1, 0 Yes 32-byte No N/A 1, 1 Yes 64-byte No N/A If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “Quad I/O Fast Read” command will use the W6-W4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with Wrap command should be issued to set W4=1. Figure 15. Set Burst with Wrap Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 x x x x x x 4 x IO1 x x x x x x 5 x IO2 x x x x x x 6 x IO3 x x x x x x x x SCLK Command IO0 77H W6-W4 7.13 Page Program (PP) (02H) The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The Page Program command sequence: CS# goes low  sending Page Program command  3-byte address on SI  at least 1 byte data on SI  CS# goes high. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. 24 Uniform Sector Dual and Quad Serial Flash GD25Q80E CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Page Program (PP) command is not executed. As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is t PP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) is not executed. Figure 16. Page Program Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Command 23 22 21 3 2 1 0 7 MSB 5 4 3 2 1 2078 2079 2077 2076 2075 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 CS# 6 0 MSB 2074 02H Data Byte 1 2073 SI 24-bit address 1 0 SCLK Data Byte 2 SI 7 6 5 4 3 2 MSB Data Byte 3 1 0 7 6 5 4 3 MSB 2 Data Byte 256 1 0 7 6 5 4 3 2 MSB 7.14 Quad Page Program (32H) The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2, and IO3. To use Quad Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The quad Page Program command is entered by driving CS# Low, followed by the command code (32H), three address bytes and at least one data byte on IO pins. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Quad Page Program (PP) command is not executed. As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated. While the Quad Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Quad Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) is not executed. 25 Uniform Sector Dual and Quad Serial Flash GD25Q80E Figure 17. Quad Page Program Sequence Diagram 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 543 0 542 CS# SCLK 0 4 0 4 0 Byte 256 4 0 IO1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 Command IO0 24-bit address 32H 23 22 21 3 2 Byte1 Byte2 1 MSB 7.15 Sector Erase (SE) (20H) The Sector Erase (SE) command is for erasing the all data of the chosen sector. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered by driving CS# low, followed by the command code, and 3-address byte on SI. Any address inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence. The Sector Erase command sequence: CS# goes low  sending Sector Erase command  3-byte address on SI  CS# goes high.. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bit is not executed. Figure 18. Sector Erase Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 20H 24 Bits Address 23 22 MSB 2 1 0 7.16 32KB Block Erase (BE) (52H) The 32KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence. The 32KB Block Erase command sequence: CS# goes low  sending 32KB Block Erase command  3-byte address on SI  CS# goes high. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise 26 Uniform Sector Dual and Quad Serial Flash GD25Q80E the 32KB Block Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE1) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits is not executed. Figure 19. 32KB Block Erase Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 24 Bits Address 52H 23 22 MSB 2 1 0 7.17 64KB Block Erase (BE) (D8H) The 64KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence. The 64KB Block Erase command sequence: CS# goes low  sending 64KB Block Erase command  3-byte address on SI  CS# goes high. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE2) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits is not executed. Figure 20. 64KB Block Erase Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI D8H 24 Bits Address 23 22 MSB 2 1 0 7.18 Chip Erase (CE) (60/C7H) The Chip Erase (CE) command is for erasing the all data of the chip. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence. The Chip Erase command sequence: CS# goes low  sending Chip Erase command  CS# goes high. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Chip Erase command is not executed. 27 Uniform Sector Dual and Quad Serial Flash GD25Q80E As soon as CS# is driven high, the self-timed Chip Erase cycle (whose duration is t CE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is executed, if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block Protect (BP2, BP1, and BP0) bits are 1 and CMP=1. Figure 21. Chip Erase Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 60H or C7H 7.19 Read Manufacture ID/ Device ID (REMS) (90H) The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID. The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first. Figure 22. Read Manufacture ID/ Device ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 90H 23 22 21 3 2 1 0 High-Z SO CS# 24-bit address 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK SI SO 7 Manufacturer ID 6 5 4 3 2 1 MSB Device ID 0 7 6 5 4 3 2 1 0 MSB 7.20 Read Identification (RDID) (9FH) The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two bytes of device identification. The device identification indicates the memory type in the first byte, and the memory capacity of the device in the second byte. The Read Identification (RDID) command while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be issued while the device is in Deep Power-Down Mode. The device is first selected by driving CS# low. Then, the 8-bit command code for the command is shifted in. This is followed 28 Uniform Sector Dual and Quad Serial Flash GD25Q80E by the 24-bit device identification, stored in the memory. Each bit is shifted out on the falling edge of Serial Clock. The Read Identification (RDID) command is terminated by driving CS# high at any time during data output. When CS# is driven high, the device is in the Standby Mode. Once in the Standby Mode, the device waits to be selected, so that it can receive, decode and execute commands. Figure 23. Read Identification ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 7 6 SCLK SI 9FH SO Manufacturer ID 5 4 3 2 1 0 MSB CS# 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCLK SI Memory Type ID15-ID8 7 6 5 4 3 2 1 0 SO MSB Capacity ID7-ID0 6 5 4 3 2 1 7 0 MSB 7.21 Read Unique ID (4BH) The Read Unique ID command accesses a factory-set read-only 128bit number that is unique to each device. The Unique ID can be used in conjunction with user software methods to help prevent copying or cloning of a system. The Read Unique ID command sequence: CS# goes low  sending Read Unique ID command  3-Byte Address (000000H) Dummy Byte128bit Unique ID Out CS# goes high. Figure 24. Read Unique ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK 24-bit address (000000H) 23 22 21 3 2 Command SI 4BH 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI SO 7 6 5 4 3 2 1 0 7 6 MSB 29 Data Out1 5 4 3 2 1 0 Data Out2 7 6 5 MSB Uniform Sector Dual and Quad Serial Flash GD25Q80E 7.22 Erase Security Registers (44H) The GD25Q80E provides 2x1024-Byte Security Registers which can be erased and programmed individually. These registers may be used by the system manufacturers to store security and other important information separately from the main memory array. The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Erase Security Registers command sequence: CS# goes low  sending Erase Security Registers command  3-byte address on SI  CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the Erase Security Registers command is not executed. As soon as CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is t SE) is initiated. While the Erase Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Security Registers Lock Bit (LB0, LB1) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security Registers will be permanently locked; the Erase Security Registers command will be ignored. Address A23-16 A15-12 A11-10 A9-0 Security Register #0 00H 0000b 00b Don't care Security Register #1 00H 0001b 00b Don't care Figure 25. Erase Security Registers command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 44H 24 Bits Address 23 22 MSB 2 1 0 7.23 Program Security Registers (42H) The Program Security Registers command is similar to the Page Program command. Each security register contains four pages content. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Program Security Registers command. The Program Security Registers command is entered by driving CS# Low, followed by the command code (42H), three address bytes and at least one data byte on SI. As soon as CS# is driven high, the self-timed Program Security Registers cycle (whose duration is t PP) is initiated. While the Program Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. If the Security Registers Lock Bit (LB0, LB1) is set to 1, the Security Registers will be permanently locked. Program Security Registers command will be ignored. Address A23-16 A15-12 A11-10 A9-0 Security Register #0 00H 0000b 00b Byte Address Security Register #1 00H 0001b 00b Byte Address 30 Uniform Sector Dual and Quad Serial Flash GD25Q80E Figure 26. Program Security Registers command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Command 23 22 21 3 2 Data Byte 1 1 0 7 5 4 3 2 1 0 2078 2079 6 2077 7 2076 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2073 MSB 2072 MSB CS# 6 2075 42H 2074 SI 24-bit address 1 0 SCLK Data Byte 2 SI 7 6 5 4 3 Data Byte 3 2 1 0 7 MSB 6 5 4 3 Data Byte 256 2 1 0 MSB 5 4 3 2 MSB 7.24 Read Security Registers (48H) The Read Security Registers command is similar to Fast Read command. The command is followed by a 3-byte address (A23-A0) and a dummy byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency f C, on the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Once the A9-0 address reaches the last byte of the register (Byte 3FFH), it will reset to 000H, the command is completed by driving CS# high. Address A23-16 A15-12 A11-10 A9-0 Security Register #0 00H 0000b 00b Byte Address Security Register #1 00H 0001b 00b Byte Address Figure 27. Read Security Registers command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 24-bit address 48H 23 22 21 3 2 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI SO 7 6 5 4 3 2 1 0 7 MSB 31 Data Out1 6 5 4 3 2 1 Data Out2 0 7 6 5 MSB Uniform Sector Dual and Quad Serial Flash GD25Q80E 7.25 Enable Reset (66H) and Reset (99H) If the Reset command is accepted, any on-going internal operation will be terminated and the device will return to its default power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch status (WEL), Program/Erase Suspend status, Read Parameter setting (P7-P0), Deep Power Down Mode, Continuous Read Mode bit setting (M7-M0) and Wrap Bit Setting (W6-W4). The “Enable Reset (66H)” and “Reset (99H)” command sequence as follow: CS# goes low  Sending Enable Reset command  CS# goes high  CS# goes low  Sending Reset command  CS# goes high. Once the Reset command is accepted by the device, the device will take approximately t RST / tRST_E to reset. During this period, no command will be accepted. Data corruption may happen if there is an on-going or suspended internal Erase or Program operation when Reset command sequence is accepted by the device. It is recommended to check the WIP bit and the SUS bit in Status Register before issuing the Reset command sequence. Figure 28. Enable Reset and Reset command Sequence Diagram CS# 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCLK SI Command Command 66H 99H High-Z SO 7.26 Program/Erase Suspend (PES) (75H) The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block erase operation and then read data from any other sector or block. The Write Status Register command (01H) and Erase/Program Security Registers command (44H, 42H) and Erase commands (20H, 52H, D8H, C7H, 60H) and Page Program command (02H, 32H) are not allowed during Program suspend. The Write Status Register command (01H) and Erase Security Registers command (44H) and Erase commands (20H, 52H, D8H, C7H, 60H) are not allowed during Erase suspend. Program/Erase Suspend is valid only during the page program or sector/block erase operation. A maximum of time of “tsus” (See AC Characteristics) is required to suspend the program/erase operation. The Program/Erase Suspend command will be accepted by the device only if the SUS bit in the Status Register equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is on-going. If the SUS bit equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the device. The WIP bit will be cleared from 1 to 0 within “tsus” and the SUS bit will be set from 0 to 1 immediately after Program/Erase Suspend. A power-off during the suspend period will reset the device and release the suspend state.. Figure 29. Program/Erase Suspend Sequence Diagram CS# 0 1 2 3 4 5 6 7 tSUS SCLK Command SI SO 75H High-Z Accept read command 32 Uniform Sector Dual and Quad Serial Flash GD25Q80E 7.27 Program/Erase Resume (PER) (7AH) The Program/Erase Resume command must be written to resume the program or sector/block erase operation after a Program/Erase Suspend command. The Program/Erase Resume command will be accepted by the device only if the SUS bit equal to 1 and the WIP bit equal to 0. After issued the SUS bit in the status register will be cleared from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the program operation. The Program/Erase Resume command will be ignored unless a Program/Erase Suspend is active. Figure 30. Program/Erase Resume Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 7AH Resume Erase/Program 7.28 Deep Power-Down (DP) (B9H) Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode (the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program and Erase commands. Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle currently in progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by executing the Deep Power-Down (DP) command. Once the device has entered the Deep Power-Down Mode, all commands are ignored except the Release from Deep Power-Down and Read Device ID (RDI) command or software reset command. The Release from Deep Power-Down and Read Device ID (RDI) command releases the device from Deep Power-Down mode, also allows the Device ID of the device to be output on SO. The Deep Power-Down Mode automatically stops at Power-Down, and the device always in the Standby Mode after PowerUp. The Deep Power-Down command sequence: CS# goes low  sending Deep Power-Down command  CS# goes high. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it requires a delay of t DP before the supply current is reduced to ICC2 and the Deep Power-Down Mode is entered. Any Deep Power-Down (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 31. Deep Power-Down Sequence Diagram CS# 0 1 2 3 4 5 6 7 tDP SCLK Command SI Deep Power-down mode B9H 33 Uniform Sector Dual and Quad Serial Flash GD25Q80E 7.29 Release from Deep Power-Down and Read Device ID (RDI) (ABH) The Release from Power-Down and Read Device ID command is a multi-purpose command. It can be used to release the device from the Power-Down state or obtain the devices electronic identification (ID) number. To release the device from the Power-Down state, the command is issued by driving the CS# pin low, shifting the instruction code “ABH” and driving CS# high. Release from Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other command are accepted. The CS# pin must remain high during the tRES1 time duration. When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first. The Device ID value is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The command is completed by driving CS# high. When used to release the device from the Power-Down state and obtain the Device ID, the command is the same as previously described, except that after CS# is driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other command will be accepted. If the Release from Power-Down / Device ID command is issued while an Erase, Program or Write cycle is in process (when WIP equals 1) the command is ignored and will not have any effects on the current cycle. Figure 32. Release Power-Down Sequence Diagram CS# 0 1 2 3 4 5 6 t RES1 7 SCLK Command SI ABH Deep Power-down mode Stand-by mode Figure 33. Release Power-Down/Read Device ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 32 33 34 35 36 37 38 SCLK Command SI SO ABH High-Z t RES2 3 Dummy Bytes 23 22 2 1 0 MSB 7 6 Device ID 5 4 3 2 MSB 1 0 Deep Power-down Mode Stand-by Mode 7.30 Read Serial Flash Discoverable Parameter (5AH) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. SFDP is a standard of JEDEC Standard No.216B. 34 Uniform Sector Dual and Quad Serial Flash GD25Q80E Figure 34. Read Serial Flash Discoverable Parameter command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 24-bit address 5AH 23 22 21 3 2 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI SO 7 6 5 4 3 2 1 0 7 6 MSB Data Out1 5 4 3 2 1 0 Data Out2 7 6 5 MSB Table 7. Signature and Parameter Identification Data Values (Please contact GigaDevice for Details) 35 Uniform Sector Dual and Quad Serial Flash 8 GD25Q80E ELECTRICAL CHARACTERISTICS 8.1 Power-On Timing Figure 35. Power-On Timing Sequence Diagram Vcc(max) Chip Selection is not allowed Vcc(min) tVSL Device is fully accessible VWI Time Table 8. Power-Up Timing and Write Inhibit Threshold Symbol Parameter tVSL VCC (min.) to device operation VWI Write Inhibit Voltage Min. Max. 1 1.5 Unit ms 2.5 V 8.2 Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFH). The Status Register contains 00H (all Status Register bits are 0). 8.3 Absolute Maximum Ratings Parameter Value Ambient Operating Temperature -40 to 85 Unit ℃ -40 to 105 -40 to 125 ℃ Storage Temperature -65 to 150 Transient Input/Output Voltage (note: overshoot) -2.0 to VCC+2.0 V Applied Input/Output Voltage -0.6 to VCC+0.4 V -0.6 to 4.2 V VCC 36 Uniform Sector Dual and Quad Serial Flash GD25Q80E Figure 36. Input Test Waveform and Measurement Level Maximum Negative Overshoot Waveform 20ns Maximum Positive Overshoot Waveform 20ns 20ns Vss Vcc + 2.0V Vss-2.0V Vcc 20ns 20ns 20ns 8.4 Capacitance Measurement Conditions Symbol Parameter Min. Typ. Max. Unit Conditions CIN Input Capacitance 6 pF VIN=0V COUT Output Capacitance 8 pF VOUT=0V CL Load Capacitance 30 pF Input Rise And Fall time 5 ns Input Pulse Voltage 0.1VCC to 0.8VCC V Input Timing Reference Voltage 0.2VCC to 0.7VCC V 0.5VCC V Output Timing Reference Voltage Figure 37. Absolute Maximum Ratings Diagram Input timing reference level 0.8VCC 0.7VCC 0.1VCC 0.2VCC Output timing reference level AC Measurement Level Note: Input pulse rise and fall time are