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PESDSC2FD5VB

PESDSC2FD5VB

  • 厂商:

    PRISEMI(上海芯导电子)

  • 封装:

    DFN1006-2L

  • 描述:

    双向5V低电容ESD保护器

  • 详情介绍
  • 数据手册
  • 价格&库存
PESDSC2FD5VB 数据手册
PESDSC2FD5VB Bi-directional 5V Low Capacitance ESD Protector Description The PESDSC2FD5VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional DFN1006-2L(Bottom View) line in applications where arrays are not practical. Feature  80W peak pulse power per line (tP = 8/20μs)  DFN1006-2L package  Replacement for MLV(0402)  Bidirectional configurations  Response time is typically < 1ns  Low clamping voltage  RoHS compliant  Transient protection for data lines to Pin 1 Pin 2 Circuit Diagram IEC61000-4-2(ESD) ±15KV(air), ±8KV(contact); IEC61000-4-4 (EFT) 40A (5/50ns) Applications  Cellular phones  Portable devices  Digital cameras  Power supplies B1 Marking (Top View) Mechanical Characteristics  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  DFN1006-2L without plating Rev.06.6 1 www.prisemi.com ESD Protector PESDSC2FD5VB Electronics Parameter Symbol VRWM IR VBR Parameter Peak Reverse Working Voltage Reverse Leakage Current @ VRWM IPP I Breakdown Voltage @ IT IT Test Current IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP PPP Peak Pulse Power CJ Junction Capacitance IF Forward Current VF Forward Voltage @ IF VC VBR VRWM IT IR V IR IT VRWM VBR VC IPP Electrical characteristics per line@25℃ (unless otherwise specified) Parameter Peak Reverse Working Voltage Breakdown Voltage Symbol Conditions Min. Typ. Max. Units 5 V 9.0 V 1.0 μA VRWM VBR It = 1mA Reverse Leakage Current IR VRWM = 5V T=25℃ Maximum Reverse Peak Pulse Current IPP Clamping Voltage VCL IPP=16A tp=100ns Clamping Voltage VC IPP=1A 10 V Clamping Voltage VC IPP=3A 15 V Clamping Voltage VC IPP=4A 21 V Junction Capacitance Cj 0.45 pF VR=0V 5.6 f = 1MHz 5.5 A 31 V 0.3 Absolute maximum rating@25℃ Rating Symbol Value Units Peak Pulse Power (tp=8/20μs) Ppp 80 W Peak Pulse Current (tp=8/20μs) Ipp 4 A Operating Temperature TJ -55 to 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Rev.06.6 2 www.prisemi.com ESD Protector PESDSC2FD5VB Typical Characteristics 80 80 % Of Rated Power 100 IPP – Peak Pulse Current - % of IPP tf=8μs 100 60 tP =20μs(IPP /2) 40 20 60 40 20 0 0 0 5 10 15 20 25 0 30 25 50 t - Time -μs 75 100 125 150 TL – Lead Temperature - ℃ Fig 1.Pulse Waveform Fig 2.Power Derating Curve 20 1000 100 IR(nA) Peak Pulse Power (W) 16 12 8 10 4 1 0 1 1000 100 10 0 25 50 100 125 150 Temperature (ºC) Pulse Duration(us) Fig 3.Non-Repetitive Peak Pulse Power vs. Pulse time Fig 4.Typical Leakage Current vs. Temperature 20 25 16 Pulse waveform: tp=8/20us 12 TLP Current(A) 20 VC-Clamping Voltage (V) 75 15 10 8 4 0 -4 -8 -12 5 -16 0 0 1 2 3 4 5 -20 -40 -32 6 IPP-Peak pulse current (A) -16 -8 0 8 16 24 32 40 TLP Voltage(v) Fig 5. Clamping voltage vs. Peak pulse current Rev.06.6 -24 Fig 6.Typical Leakage Current vs. Temperature 3 www.prisemi.com ESD Protector PESDSC2FD5VB Solder Reflow Recommendation Preliminary Heating 300 Soldering Cooling(in air) Temperature of Soldering 260℃ (20,-5℃) 250 245℃ (20,-5℃) 200 150 120℃ 100 100℃ 50 0 2 to 5 min more than 1 min Less than 10s Remark: Pb free for 260℃;Pb for 245℃. PCB Design For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD protection. Novices in the area of ESD protection should take following suggestions to heart:  Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.  Do not make false economies and save copper for the ground connection.  Place via holes to ground as close as possible to the anode of the TVS diode.  Use as many via holes as possible for the ground connection.  Keep the length of via holes in mind! The longer the more inductance they will have. Rev.06.6 4 www.prisemi.com ESD Protector PESDSC2FD5VB Product dimension (DFN1006-2L) Inches A Millimeters Dim B C R D E MIN MAX MIN MAX A 0.013 0.020 0.34 0.498 B 0.000 0.002 0.00 0.05 C 0.037 0.043 0.95 1.080 D 0.022 0.027 0.55 0.680 E 0.016 0.024 0.40 0.60 F 0.008 0.012 0.20 0.30 H R F 0.015Typ. 0.001 0.005 0.40Typ. 0.05 0.15 H 1.20 0.50 0.60 0.70 Unit:mm Suggested PCB Layout Ordering information Device Package Reel Shipping PESDSC2FD5VB DFN1006-2L (Pb-Free) 7" 10000 / Tape & Reel Rev.06.6 5 www.prisemi.com ESD Protector PESDSC2FD5VB Load with information USER DIRECTION OF FEED Φ1.50 ± 0.10 2.00 ± 0.05 2.00 ± 0.05 1.75 ± 0.10 4.00 ± 0.10 3.50 ± 0.05 8.00 ± 0.10 Φ0.50 ± 0.05 Unit:mm Rev.06.6 6 www.prisemi.com
PESDSC2FD5VB
物料型号: - 型号:PESDSC2FD5VB

器件简介: - PESDSC2FD5VB是一种双向5V低电容静电放电保护器,用于保护敏感的半导体元件免受静电放电(ESD)和其他电压引起的瞬态事件的损害。

引脚分配: - 引脚1和引脚2用于双向配置。

参数特性: - 典型响应时间:< 1ns - 符合RoHS标准 - 80W峰值脉冲功率每线(tP = 8/20μs) - 替代MLV(0402) - 符合IEC61000-4-2(ESD) ±15KV(空气), ±8KV(接触); IEC61000-4-4 (EFT) 40A (5/50ns)

功能详解: - 提供数据线路的瞬态保护 - 用于移动电话、便携式设备、数码相机、电源等

应用信息: - 适用于移动电话、便携式设备、数码相机、电源等

封装信息: - 封装类型:DFN1006-2L - 封装尺寸:长0.34mm到0.498mm,宽0.95mm到1.08mm - 建议的PCB布局:避免使用stub,直接将TVS二极管的阴极放置在信号线上,尽可能多地使用通孔连接地线,注意通孔的长度以减少电感。

电气特性: - 反向工作电压(VRWM):5V - 反向漏电流(IR):1.0uA - 反向击穿电压(VBR):5.6V至9.0V - 最大反向峰值脉冲电流(Ipp):5.5A - 钳位电压(Vc):在不同Ipp下变化 - 峰值脉冲功率(Ppp):80W - 结电容(CJ):0.3pF至0.45pF - 正向电流(IF)和正向电压(VF):未提供具体数值

绝对最大额定值: - 峰值脉冲功率:80W - 反向峰值脉冲电流:未提供具体数值 - 工作温度:-55℃至150℃ - 存储温度:-55℃至150℃

焊接回流建议: - 预热:2至5分钟 - 焊接:260℃(无铅)或245℃(有铅),持续时间超过1分钟 - 冷却:少于10秒

产品尺寸: - 提供了详细的尺寸图表,包括英寸和毫米单位的最小值和最大值。

订购信息: - PESDSC2FD5VB封装为DFN1006-2L,每卷10000个。
PESDSC2FD5VB 价格&库存

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PESDSC2FD5VB
    •  国内价格
    • 20+0.15771
    • 200+0.11350
    • 600+0.08676
    • 2000+0.07855
    • 10000+0.07150

    库存:2893

    PESDSC2FD5VB
    •  国内价格
    • 1+0.14293
    • 100+0.13340
    • 300+0.12387
    • 500+0.11434
    • 2000+0.10958
    • 5000+0.10672

    库存:8425