PPMT30V4

PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) -30 RDS(on)(Ω ) ID(A) 0.053 @ VGS=-10V G（1） -4.2 0.065@ VGS=-4.5V S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID =-250μA,VGS=0V -30 - - V Zero Gate Voltage Drain Current IDSS VDS =-24V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VDS =0V,VGS=±12V - - ±100 nA Gate Threshold Voltage VGS(th) VDS =VGS, ID =-250μA -0.7 -1.3 V VGS=-10V, ID =-4.2A - 53 60 mΩ VGS=-4.5V, ID =-4A - 65 75 mΩ 86 120 mΩ Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V, ID =-2A Forward Trans conductance gFS VGS=-5V, ID =-5A, TA=125℃ 7 11 S - 950 pF - 110 pF - 75 pF DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance CDSS Reverse Transfer Capacitance CRSS VGS=0V, VDS =-15V, f=1MHz SWITCHING PARAMETERS Turn-On Delay Time td(on) Turn-Off Delay Time td(off) VDD=-15V, VGS =-10V, RL=3.6Ω, RG=6Ω - 20 ns - 35 ns Absolute maximum rating@25℃ Parameter Thermal Resistance, Junction-to-Ambient (Note 2) Rev.06.2 1 Symbol Value Units RθJA 104 ℃/W www.prisemi.com P-Channel MOSFET PPMT30V4 Absolute maximum rating@25℃ Rating Symbol Value Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous ID -4.2 A Pulsed ID -30 A PD 1.2 W TJ,TSTG -55 To 150 ℃ Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Typical Characteristics 4.8 1.75 TA=-25℃ ID – Drain Current (A) PD Power (W) 1.5 1 0.5 2.4 1.2 0 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Fig 1. Power Dissipation Fig 2. Drain Current 140 140 25 -10V 120 20 -4.5V Rdson On-Resistance(mΩ) ID- Drain Current (A) 3.6 15 -2.5V 10 VGS=-2V 5 VGS=-2.5V 100 80 VGS=-4.5V 60 VGS=-10V 40 0 20 0 1 2 3 4 0 5 Vds Drain-Source Voltage (V) 4 6 8 10 ID- Drain Current (A) Fig 3. Output Characteristics Rev.06.2 2 Fig 4. Drain-Source On-Resistance 2 www.prisemi.com P-Channel MOSFET PPMT30V4 10 1.8 VDS=-5V 1.6 Normalized On-Resistance ID – Drain Current (A) 8 6 125℃ 4 25 ℃ 2 VGS=-4.5V VGS=-10V 1.4 VGS=-2.5V 1.2 1 0 0 20 40 60 100 120 0.8 0 140 25 50 Vgs Gate-Source Voltage (V) 75 100 125 150 175 TJ-Junction Temperature(℃) Fig 5.Transfer Characteristics Fig 6. Transfer Characteristics 1400 165 145 1200 125 C Capacitance (pF) Rdson On -Resistance(mΩ) ID=-4.2A 105 85 125℃ 65 1000 Ciss 800 600 400 Coss 45 Crss 200 25℃ 0 2 6 4 8 00 10 20 40 60 100 Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Fig. 7 Rdson vs Vgs Fig.8 Capacitance vs Vds 5 120 140 1.2 1.4 10 VDS=-15V ID=14.2A Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) 4 3 125℃ 2 25 ℃ 1 0 0 Rev.06.2 TJ=150℃ TJ=150℃ 1 TJ=-50℃ 0.1 2 4 6 8 10 0.0 12 0.2 0.4 0.6 0.8 1.0 Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Fig. 9 Gate Charge Fig.10 Source- Drain Diode Forward 3 www.prisemi.com P-Channel MOSFET PPMT30V4 100 TJ(Max)=150℃ TA=25℃ ID – Drain Current (A) 10us RDS(ON) limited 100us 10.0 1ms 0.1s 10ms 1.0 1s 10s DC 0.1 0.1 1 10 Vds Drain-Source Voltage (V) 100 Fig. 11 Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance 10 In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA. RθJA RθJA=104℃/W 1 PD 0.1 Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pluse Duration(sec) Fig.12 Normalized Maximum Transient Thermal Impedance Rev.06.2 4 www.prisemi.com P-Channel MOSFET PPMT30V4 Product dimension(SOT-23) A θ (3) C B (1) (2) H D F G E J L K Millimeters Inches Dim Rev.06.2 MIN MAX MIN MAX A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 2.10 2.50 0.0830 0.0984 D 0.89 1.02 0.0350 0.0401 E 0.45 0.60 0.0177 0.0236 F 1.78 2.04 0.0701 0.0807 G 0.085 0.177 0.0034 0.0070 H 0.45 0.60 0.0180 0.0236 J 0.37 0.50 0.0150 0.0200 K 0.89 1.11 0.0350 0.0440 L 0.013 0.100 0.0005 0.0040 θ 0° 10° 0° 10° 5 www.prisemi.com P-Channel MOSFET PPMT30V4 Marking information PT34 Ordering information Rev.06.2 Device Package Reel Shipping PPMT30V4 SOT-23 (Pb-Free) 7'' 3000 / Tape & Reel 6 www.prisemi.com P-Channel MOSFET PPMT30V4 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.2 7 www.prisemi.com